Infineon Technologies Ag

Qimonda Ag

Florian Binder

Grit Sommer

Alfred Martin

Barbara Hasler

Stephan Dertinger

Manfred Schneegans

Thomas Peter Haneder

Holger Torwesten

Judith Lehmann

An integrated circuit having a semiconductor substrate with a barrier layer is disclosed. The arrangement includes a semiconductor substrate and a metallic element. A carbon-based barrier layer is disposed between the semiconductor substrate and the metallic element.

Integrated circuit having a semiconductor substrate with barrier layer

A substrate has at least one feedthrough with at least one channel from a first main surface of the substrate to a second main surface of the substrate. The at least one channel is closed off with a first material. The at least one closed-off channel is filled with an electrically conductive second material.

Substrate with feedthrough and method for producing the same

A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one channel includes a first cross-sectional area at a first location and a second cross-sectional area at a second location. An electrically conductive first material is disposed in the at least one channel.

Integrated circuit having a semiconductor substrate with a barrier layer

Chip carrier with reduced interference signal sensitivity

Growing community of inventors

Gauting, Germany

Florian Binder