European Aeronautic Defence and Space Company Eads France

Astrium Sas

Airbus Operations (s.a.s.)

Airbus Group Sas

European Aernautic Defence and Space Company Eads France

European Aeronautic Defence and Space Compai

European Aeronautic Defence and Space Company Eads

Airbus Operations Gmbh

Florent Miller

Nadine Buard

Thierry Carriere

Patrick Heins

Antonin Bougerol

Cécile Weulersse

Imad Lahoud

Samuel Hazo

Sebastien Morand

Cedric Ruby

Cecile Weulersse

Cédric Ruby

A method for characterizing the sensitivity of an electronic component with respect to a natural radiating environment. The safe operating area (SOA) voltage range beyond which destructive events occur is determined for the electronic component for given characteristics of a particle or incident beam. The electronic component is turned on and energized with the particle or incident beam having the given characteristics under the operating conditions that are close to the highest voltage value of the determined SOA voltage range. An efficient section of amplified transient events, which corresponds to an estimation of the destructive occurrences for the electronic component is determined. The characteristics of the particle or beam is modified and the method is repeated with the modified characteristics.

Method for characterizing the sensitivity of electronic components to destructive mechanisms

To test a software application, a method submits an electronic board including a component implementing an application to a laser radiation generated in test equipment. The component is excited with laser pulses having very short durations distributed during complex operational phases of the component for running the application, and the reaction of the component and the application are observed.

Method for testing a software application

To produce a memory which resists ion or photon attack, a memory structure is chosen whose memory point behaves asymmetrically with regard to these attacks. It is shown that in this case, it is sufficient to have a reference cell for an identical and periodic storage structure in order to be able to correct all the memory cells assailed by an attack. An error correction efficiency of &#xbd; is thus obtained, with a simple redundancy, whereas the conventional methods make provision, for the same result, to triple the storage, to obtain a less beneficial efficiency of &#x2153;.

Method for detecting and correcting errors for a memory whose structure shows dissymmetrical behavior, corresponding memory and its use

The invention relates to an electric generator sensitive to ionizing radiation produced by the reverse mounting of a diode in parallel between a reverse polarization stack and a pulse converter or only with a pulse converter. A generator is thus provided that can be used inside a spacecraft or in the atmosphere by using cosmic radiation, or in an environment containing ionizing radiation such as in the medical or nuclear fields, and which is preferably directly mounted on a printed circuit board receiving a remote sensor.

Electric generator excited by ionizing radiations

To analyze an electronic component, this component is exposed to a focused laser beam. The information provided by the laser mapping relating to the position and to the depth of the sensitivity zones of the component is used as input parameter in prediction codes for quantifying the sensitivity of the mapped component to ionizing particles in the natural radioactive environment. The prediction codes are used to determine the occurrence of malfunctions in the electronic component. Determination of the risks associated with the radiative environment imposes two aspects: one, probabilistic, takes into account the particle/matter interaction and the other, electrical, takes into account the charge collection inside the electronic component.

Method of determining the particle sensitivity of electronic components

The behavior of a component subjected to pulsed laser radiation is measured. The polarization value, frequency, and temperature (or other operating conditions) to which the component is sensitive are determined by detecting a temporary or permanent fault in the operation of the component. If necessary, the parasitic currents generated are prevented from destroying the tested component at the time of testing. A susceptibility of the component to energetic interactions and the preferred operating conditions for the component are deduced.

Method for characterizing the sensitivity of an electronic component to energetic interactions

The invention relates to a device for testing an integrated circuit. The device comprises a plate for receiving and subjecting the integrated circuit to a test. The plate comprises a component for powering and operating the integrated circuit and another component for measuring the operation of the integrated circuit during the test. The device also comprises an irradiation device for subjecting the circuit to a proton bombardment and a mask with a variable thickness provided between a bombardment access region on the integrated circuit and an established zone of the integrated circuit.

Device for testing an integrated circuit and method for implementing same

To analyze an electric component in depth, provision is made to submit the aforementioned component to focused laser radiation. It is shown that by modifying the altitude of the focus in the component, some internal parts of the aforementioned component can be characterized more easily.

Method and device for characterising sensitivity to energy interactions in an electronic component

In order to protect an integrated circuit provided with a cryptoprocessor from attacks aiming to reveal secrets, it is anticipated to use a component sensitive to the activation of a parasitic (latchup) thyristor and/or to the activation of a parasitic bipolar transistor, or to design a circuit having this property. If the component is stressed due to the presence of this circuit, it is immediately deactivated, actually preventing the revelation of the secrets thereof.

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Levallois, France

Florent Miller