Stmicroelectronics S.r.l.

Sgs-Thomson Microelectronics S.r.l.

Sgs Microelettronica Spa

Stmicroelectronics International N.v.

Flavio Francesco Villa

Gabriele Barlocchi

Ubaldo Mastromatteo

Pietro Corona

Paolo Ferrari

Lorenzo Baldo

Benedetto Vigna

Enri Duqi

Bruno Murari

Dino Faralli

Enrico M Ravanelli

Andrea Di Matteo

Franco Bertotti

Maria Fortuna Bevilacqua

Valeria Casuscelli

Rossana Scaldaferri

Federico Giovanni Ziglioli

Roberto Carminati

Chantal Combi

Pietro Erratico

Luca Zanotti

Mario Foroni

Enrico Sacchi

Amedeo Maierna

Andrea Nomellini

Manlio Gennaro Torchia

Marco Morelli

Sebastiano Conti

Marco Siligoni

Pietro Montanini

Carlo Cini

Aldo Torazzina

Marco Del Sarto

Mauro Cattaneo

Fabrizio Stefani

Guido Chiaretti

Laura Maria Castoldi

Angelo Alzati

Lorenzo Corso

Luca Seghizzi

Fabrizio Fausto Renzo Toia

Mikel Azpeitia Urquia

Sandro Storti

Roberto Campedelli

Simone Dario Mariani

Ilaria Gelmi

Igor Varisco

Marco Marchesi

Lucia Zullino

Francesco Foncellino

Luca Lamagna

Giampiero Ottaviani

Maria Carolina Turi

Federico Corni

Herbert Sax

Martina Scolari

Luigi Silvestri

Giovanni Siepe

Silvia Nicoli

Filippo D'ercoli

MEMS device formed in a semiconductor body which is monolithic and has a first and a second main surface. A buried cavity extends into the semiconductor body below and at a distance from the first main surface. A diaphragm extends between the buried cavity and the first main surface of the semiconductor body and has a buried face facing the buried cavity. A diaphragm insulating layer extends on the buried face of the diaphragm and a lateral insulating region extends into the semiconductor body along a closed line, between the first main surface and the diaphragm insulating layer, above the buried cavity. The lateral insulating region laterally delimits the diaphragm and forms, with the diaphragm insulating layer, a diaphragm insulating region which delimits the diaphragm and electrically insulates it from the rest of the wafer.

MEMS device comprising an insulated suspended diaphragm, in particular pressure sensor, and manufacturing process thereof

The present disclosure is directed to a method for manufacturing a micro-electro-mechanical device. The method includes the steps of forming, on a substrate, a first protection layer of crystallized aluminum oxide, impermeable to HF; forming, on the first protection layer, a sacrificial layer of silicon oxide removable with HF; forming, on the sacrificial layer, a second protection layer of crystallized aluminum oxide; exposing a sacrificial portion of the sacrificial layer; forming, on the sacrificial portion, a first membrane layer of a porous material, permeable to HF; forming a cavity by removing the sacrificial portion through the first membrane layer; and sealing pores of the first membrane layer by forming a second membrane layer on the first membrane layer.

Method for manufacturing a capacitive pressure sensor and capacitive pressure sensor

A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.

Semiconductor device and method for manufacturing a semiconductor device

A process for manufacturing a MEMS piezoelectric device includes: forming a membrane at a first surface of wafer of semiconductor material further having a second surface (the first and second surfaces being opposite along a vertical axis and extending parallel to a horizontal plane formed by first and second horizontal axes); forming a cavity within the wafer so that the membrane is suspended above the cavity; forming a piezoelectric material layer above a first surface of the membrane; forming an electrode arrangement in contact with the piezoelectric material layer; and forming a proof mass coupled to a second surface of the membrane opposite to the first surface along the vertical axis. The proof mass deforms the membrane in response to environmental mechanical vibrations. Forming the proof mass includes forming a connection element at a central position between the membrane and the proof mass in the direction of the vertical axis.

MEMS piezoelectric device and corresponding manufacturing process

A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.

Thermoelectric generator

A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

Method of fabrication of an integrated thermoelectric converter, and integrated thermoelectric converter thus obtained

A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.

A MEMS micromirror device includes a monolithic body of semiconductor material having a first main surface and a second main surface, with the monolithic body having an opening extending from the second main surface and including a suspended membrane of monocrystalline semiconductor material extending between the opening and the first main surface of the monolithic body. The suspended membrane includes a supporting frame and a mobile mass carried by the supporting frame and rotatable about an axis parallel to the first main surface, with the mobile mass having a width less than a width of the opening. A reflecting region extends over the mobile mass.

Process for manufacturing a MEMS micromirror device, and associated device

An integrated optical device, including: a semiconductor body delimited by a top surface; and at least one buried cavity, which extends in the semiconductor body, at a distance from the top surface, so as to delimit at the bottom a front semiconductor region, which functions as an optical guide.

Integrated optical device with a waveguide and related manufacturing process

A process for manufacturing a microelectromechanical device envisages: providing a wafer of semiconductor material; forming a buried cavity, completely contained within the wafer, and a structural layer formed by a surface portion of the wafer and suspended over the buried cavity; forming first trenches through the structural layer as far as the buried cavity, which define the suspended structure in the structural layer; filling the first trenches and the buried cavity with sacrificial material; forming a closing structure above the structural layer; removing the sacrificial material from the first trenches and from the buried cavity to release the suspended structure, the suspended structure being isolated and buried within the wafer in a buried environment formed by the first trenches and by the buried cavity.

Process for manufacturing a microelectromechanical device having a suspended buried structure and corresponding microelectromechanical device

A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.

Semiconductor die with buried capacitor, and method of manufacturing the semiconductor die

A buried cavity is formed in a monolithic body to delimit a suspended membrane. A peripheral insulating region defines a supporting frame in the suspended membrane. Trenches extending through the suspended membrane define a rotatable mobile mass carried by the supporting frame. The mobile mass forms an oscillating mass, supporting arms, spring portions, and mobile electrodes that are combfingered to fixed electrodes of the supporting frame. A reflecting region is formed on top of the oscillating mass.

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

Micro-electro-mechanical device and manufacturing process thereof

A piezoelectric micro-machined ultrasonic transducer (PMUT) comprising: a semiconductor body having a first cavity and a membrane, which is suspended over the first cavity and faces a front side of the semiconductor body; and a piezoelectric transducer assembly extending at least in part on the membrane, which may be actuated for generating a deflection of the membrane. A second cavity extends buried in a peripheral region of the membrane and delimits a central region of the membrane. Moreover, the peripheral portion has a stiffness lower than the stiffness of the central portion.

Piezoelectric micro-machined ultrasonic transducer (PMUT) and method for manufacturing the PMUT

A device for detecting the concentration of biological materials is formed in a body having a plurality of fluidic paths connectable to a multi-microbalance structure carrying a plurality of microbalances, each microbalance having a sensitive portion facing a reaction chamber. The body and the multi-microbalance structure are configured to be mechanically coupled together and each microbalance is configured to be coupled to a respective fluidic path. Each fluidic path includes an inlet, a duct and a liquid waste, each duct being configured to be coupled with a respective reaction chamber. The plurality of fluidic paths and microbalances form at least one first and one second reference cells and one first sample cell.

Device and method of detecting TSH

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Milan, Italy

Flavio Francesco Villa