Tokyo Electron Limited

Fitrianto

Yoshifumi Amano

Hiromitsu Namba

Yoichi Tokunaga

Keizo Hirose

Nobutaka Mizutani

Satohiko Hoshino

Isao Tsukagoshi

A substrate processing apparatus includes a substrate holder that holds a substrate in a horizontal direction; a rotation driver that rotates the substrate holder; a first processing liquid nozzle that supplies a first processing liquid to a peripheral portion of the substrate; a first gas supply source that supplies a first gas at a first temperature to the peripheral portion of the substrate; and a second gas supply source that supplies a second gas at a second temperature to an inner side of the substrate in a radial direction. The first gas supply source includes a heater that heats the first gas into the first temperature, and a first gas ejection port that supplies the first gas heated by the heater through a conduit, and the second gas supply source includes a second gas ejection port that supplies the second gas through a gas supply pipe.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently exposing the resist film to light in a prescribed pattern and developing the resist film so as to form a prescribed circuit pattern in the resist film. Then, the wafer W is etched so as to form a via hole in the porous low-k film, followed by processing the wafer with a hydrogen peroxide solution so as to denature the resist film. Further, the sacrificial film is dissolved in a pure water so as to strip the resist film and the antireflection film from the water. As a result, a via hole excellent in the accuracy of the shape is formed without doing damage to the dielectric film.

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Kumamoto, Japan

Fitrianto