Element Six Technologies Limited

Group4 Labs, Inc.

Firooz Faili

Daniel Francis

Felix Ejeckam

Quentin Diduck

Dubravko Ivan Babic

Frank Yantis Lowe

John Wasserbauer

Dubravko Babić

Kristopher Matthews

Sergey Zaytsev

A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture

Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

Gallium&#x2014;nitride-on-diamond wafers and devices, and methods of manufacture

Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof

Growing community of inventors

Los Gatos, CA, United States of America

Firooz Faili