Stmicroelectronics S.r.l.

Filippo Giannazzo

Sebastiano Ravesi

Cristina Tringali

Stella Loverso

Corrado Accardi

Simone Rascuna′

Fabrizio Roccaforte

Giuseppe Greco

Noemi Graziana Sparta′

Noemi Graziana Sparta'

Simone Rascunà

Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.

Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device

The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.

Method for coupling a graphene layer and a substrate and device comprising the graphene/substrate structure obtained

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Catania, Italy

Filippo Giannazzo