Array Photonics, Inc.

Solar Junction Corporation

Ams International Ag

Ferran Suarez

Ting Liu

Aymeric Maros

Homan Bernard Yuen

Sabeur Siala

Pranob Misra

Rebecca Elizabeth Jones-Albertus

Ewelina Natalia Lucow

Michael J Sheldon

Sathya Chary

Vijit A Sabnis

Daniel Derkacs

Lan Zhang

Arsen Sukiasyan

Jordan Lang

Radek Roucka

Michael West Wiemer

Ding Ding

Jacob Thorp

Ali Torabi

Michael Sheldon

Evan Pickett

Ivan Hernandez

Micahel West Wiemer

Daniel Najer

David Taner Bilir

Ewelina Lucow

A self-mixing interferometry sensor module, comprising a light emitter (LE), a detector unit (DU) and an optical element (OE), wherein the light emitter (LE) is operable to emit coherent electromagnetic radiation towards an external object (ET) to be placed outside the sensor module and undergo self-mixing interference, SMI, caused by reflections of the emitted electromagnetic radiation from the external object back inside the sensor module. The detector unit (DU) is operable to generate output signals indicative of an optical power output of the light emitter (LE) due to the SMI. The optical element (OE) is aligned with respect to the light emitter (LE) such that a first fraction of electromagnetic radiation is directed towards the external target (ET) or the light emitter (LE) and a second fraction of electromagnetic radiation is directed towards the detector unit (DU). An optical power ratio determined by the first and second fractions meets a pre-determined value.

Self-mixing inteferometry sensor module, electronic device and method of determining an optical power ratio for a self-mixing inteferometry sensor module

Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 &#x3bc;m.

Short wavelength infrared optoelectronic devices having a dilute nitride layer

Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.

Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

Hydrogen diffusion barrier for hybrid semiconductor growth

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells

Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.

High efficiency multijunction photovoltaic cells

This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Via etch method for back contact multijunction solar cells

Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Surface mount solar cell with integrated coverglass

Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.

High efficiency multijunction solar cells

Growing community of inventors

Chandler, AZ, United States of America

Ferran Suarez