Massachusetts Institute of Technology

Fernando J Castano

Caroline Anne Ross

Anthony John Nichol

George Barbastathis

William Jay Arora

A magnetoresistive Wheatstone-bridge structure includes a magnetoresistive ring structure. The magnetoresistive ring structure includes a first magnetic layer comprising a ferromagnetic material. A second magnetic layer also includes a ferromagnetic material. A non-magnetic spacer is positioned between the first magnetic layer and the second magnetic layer. A vacant open region is positioned in the center region of the magnetoresistive ring structure. A plurality of magnetic states can exist in either the first magnetic layer or second magnetic layer. Furthermore, the magnetoresistive Wheatstone-bridge structure includes a plurality of voltage and current contacts arranged symmetrically upon the magnetoresistive ring structure. The magnetic state of the ring is detected by measuring its resistance.

Wheatstone-bridge magnetoresistive device

A passive nanomagnet alignment method is described to self-align a membrane to another surface. The membrane and the surface each have a plurality of nanomagnets patterned on it, wherein the nanomagnets are magnetized based on an applied external magnetic field. The membrane is brought into close proximity and coarse alignment to the surface by a positioning mechanism (e.g., an actuation force), such that the nanomagnets on the membrane attract to and self-align with the nanomagnets on said surface based on the nanomagnet magnetizations.

Thin membrane alignment method using patterned nanomagnets

A magnetic-ring structure includes at least two states, and at least one twisted state that includes a 360&#xb0; domain wall that can exist over a wide range of applied fields.

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Cambridge, MA, United States of America

Fernando J Castano