General Electric Company

The United States of America, As Represented by the Secretary, Department of Health and Human Services

Ferenc Horkay

Peter J Basser

Richard Joseph Uriarte

Donald Joseph Buckley

David B Cerutti

Carlo Pierpaoli

Yuzhuo Li

Earl Royce Tyre, Jr

Jason J Keleher

Robert J Wojnarowski

William Paul Minnear

Richard A Striker

Laurence Bigio

Pamela King Benicewicz

Adam Berman

Juliana Piukaso-Vich Reisman

A self-reinforcing composite gel includes a solvent, and a plurality of swellable crosslinked polymer particles dispersed in a crosslinked polymer matrix, wherein the crosslinked polymer matrix and the plurality of swellable crosslinked polymer particles are immersed in the solvent, wherein the swellable crosslinked polymer particles absorb more solvent at equilibrium than the matrix polymer, and wherein the plurality of swellable crosslinked polymer particles swell in the solvent and are present in an amount sufficient to maintain or increase the elastic modulus and/or load-bearing ability of the self-reinforcing composite gel, i.e., compared to that of the crosslinked matrix polymer alone, upon swelling in the solvent.

Composite gels and methods of use thereof

A phantom calibration body () for calibrating diffusion MRI device () that mimics a material such as a mammalian tissue is disclosed. The phantom calibration body () includes a homogeneous aqueous solution () that contains a mixture of low molecular-weight and high molecular-weight polymers housed in a container () that is placed in the diffusion MRI device () for obtaining one or more diffusion MRI images of the phantom calibration body (). A measure of diffusivity is calculated for each of the one or more diffusion MRI images in order to calibrate the diffusion MRI device. Methods of using the phantom calibration body () to calibrate diffusion MRI device () are also disclosed.

Phantom for diffusion MRI imaging

A measurement system including a staging unit including a substrate having piezoelectric properties and a conductive electrode formed on the substrate, the conductive electrode including an area adapted to receive a sample, and an oscillator coupled to the conductive electrode. A method including in a tissue sample having a mass of less than about one microgram and that exerts a high osmotic pressure, calculating an osmotic pressure value for the tissue sample from a plurality of measurements of changes in the mass due to swelling.

Method for tissue osmometry

An environmentally favorable method is described for treating an incandescent lamp with a heat curable substantially organic solvent free silicone composition to improve the shatter resistance of the lamp.

Shatter-resistant incandescent lamp, silicone coating composition, and method

An improved LED lead frame packaging assembly includes a thermally conducting, electrically insulating material that enhances the thermal conduction and structural integrity of the assembly, a UV-resistant encapsulantmaterial, and an integral ESD material that reduces electrostatic discharge. The thermally conducting, electrically insulating material creates an electrically insulating, thermally conductive path in the lead frame assembly for dissipation of power and also acts as a mounting structure thus allowing for the use of a soft encapsulant material, preferably a silicone.

Led lead frame assembly

The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 5 wt-% of an a hydroxyl amine compound, (ii) between about 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 4 and 10, and advantageously about 8.5 pH. The semiconductor wafer then is subjected to CMP using said secondary aqueous slurry. Thereafter, the semiconductor wafer again is subjected to a cleaning operation.

Diamond slurry for chemical-mechanical planarization of semiconductor wafers

The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of one or more of a complexing agent or a passivating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;m, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 7 wt-% of one or more a complexing agent or a passivating agent, (ii) between about 0 and 5 wt-% of a surfactant, (iii) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;m, and (iv) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 4 and 10, and advantageously about 8.5 pH. The semiconductor wafer then is subjected to CMP using said secondary aqueous slurry. Thereafter, the semiconductor wafer again is subjected to a cleaning operation.

Growing community of inventors

Rockville, MD, United States of America

Ferenc Horkay