Stmicroelectronics S.r.l.

Sgs-thomson Microelectronics S.r.l.

Ferdinando Lari

Pietro Consiglio

Carlo Antonini

Pietro Erratico

Marco Siligoni, Deceased

Walter Rossi

Luigi Vergani

A subscriber's telephone system is presented that includes at least one driver circuit connected to Tip and Ring terminals. An additional network is connected between an output of the driver circuit and the Ring terminal. This additional network includes a suitably dimensioned capacitor and a diode limiter connected in parallel with each other to minimize the overall voltage while maintaining a desired battery mean value.

Telephone subscriber system

MOS transistors substitute circuit having a transformer/data interface function, particularly for ISDN networks and corresponding control and driving switch configuration

A method of measuring under running conditions operation parameters of an interface circuit and a telephone subscriber line connected to it, said interface circuit comprising a first integrated circuit operating on a high voltage with outputs connected to the line and second outputs on which transverse and longitudinal current values of the line are respectively present in normal operation, and a second integrated circuit operating on a low voltage between the first circuit and a telephone exchange, comprises the steps of: switching the outputs across an impedance of a predetermined value, and measuring through the first circuit the values of the currents present on the second outputs; switching said outputs back to across the line leads, and measuring through the first circuit the values of the transverse and longitudinal line current values; performing, for each measurement through the second circuit, a digital encoding of the measured values and transmitting such encoded values to the telephone exchange.

Method and device for measuring operation parameters of telephone

An operational amplifier, of a type which comprises a differential cell transconductor input stage (2) incorporating a current mirror (5) provided with a pair of degenerative resistors (R9,R10) and a gain stage (7), driven directly by a transistor (Q12) of said mirror (5), has each degenerative resistor (R9,R10) formed within an epitaxial well wherewith a parasitic diode (D1,D2) is associated. Each diode (D1,D2) is connected in parallel with its corresponding resistor (R9,R10) to prevent the transistor (Q12) which drives the gain stage (7) from becoming saturated.

Circuit with diode-protected emitter resistors

Growing community of inventors

Vimercate, Italy

Ferdinando Lari