Freiberger Compound Materials Gmbh

Osram Opto Semiconductors Gmbh

Freiberger Compund Materials Gmbh

Ferdinand Scholz

Frank Habel

Peter Brückner

Frank Lipski

Matthias Peter

Gunnar Leibiger

Klaus Köhler

Martin Klein

Thomas Wunderer

Alfred Lell

Volker Härle

Stefan Bader

Stephan Schwaiger

Jürgen Off

Heinz Clemens Schweizer

Rudolph Rosch

Barbara Neubert

Viorel Dumitru

Bertram Kuhn

Ilona Argut

Ilona Schwaiger

Rudolph Rösch

There is provided a template comprising a substrate comprising sapphire and at least one III-N crystal layer, wherein III denotes at least one element of the main group III of the periodic table of the elements, selected from the group of Al, Ga and In, wherein in a region of the at least one III-N layer above the substrate comprises a mask material as an interlayer, wherein the III-N crystal layer of the template is defined by one or both of the following values (i)/(ii) of the deformation &#x3b5;: (i) at room temperature the &#x3b5;value lies in the range of &#x3c;0; and (ii) at growth temperature the &#x3b5;value lies in the range of &#x3b5;&#x2264;0.

Method for producing III-N templates and the reprocessing thereof and III-N template

The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.

Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such

An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.

Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon

A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (AlO) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.

Semipolar semiconductor crystal and method for manufacturing the same

In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.

Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby

A radiation-emitting semiconductor component having a semiconductor body (), which has a radiation-generating active layer () and a p-conducting contact layer (), which contains InGaN or AlInGaN and to which a contact metalization () is applied.

Radiation-emitting semiconductor component and method for making same

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Ulm, Germany

Ferdinand Scholz