International Business Machines Corporation

Fenton Reed Mc Feely

John Jacob Yurkas

Supratik Guha

Sandra Guy Malhotra

Carlos Juan Sambucetti

Michael Wayne Lane

Robert Rosenberg

Stefanie Ruth Chiras

Philippe Mark Vereecken

Jennifer L Gardner

In integrated circuit technology; an electromigration and diffusion sensitive conductor of a metal such as copper and processing procedure therefore is provided, wherein, at a planarized chemical mechanical processed interfacing surface, the conductor metal is positioned in a region of a selectable low K eff dielectric material surrounded by a material selected to be protection from outdiffusion and a source of a film thickness cap that is to form over the conductor metal and/or serve as a catalytic layer for electroless selective deposition of a CoWP capping .

Formation of aligned capped metal lines and interconnections in multilevel semiconductor structures

A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.

Metal catalyzed selective deposition of materials including germanium and antimony

A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of nitrogen-doped GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400&#xb0; C., which makes the inventive method compatible with existing interconnect processes and materials. In some embodiments, the inventive method is a non-selective CVD process, which means that the nitrogen-doped GeSb materials are deposited equally well on insulating and non-insulating materials. In other embodiments, a selective CVD process is provided in which the nitrogen-doped GeSb materials are deposited only on regions of a substrate in a metal which is capable of forming an eutectic alloy with germanium.

Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony

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Fenton Reed Mc Feely