Soltrium Advanced Materials Technology

Soltrium Corp.

Sobtrium Advanced Materials Technology, Ltd.

Fengzhen Sun

Delin Li

Xiaoli Liu

Jie Zhang

Yu Ngok Li

Wen Shi

Yu Li

An epoxy conductive paste is disclosed, based on 100 parts by total mass, comprising the following raw material components: 30˜81 parts of conductive particles, 16˜30 parts of epoxy, 0.2˜3 parts of acrylic, 1˜15 parts of reactive diluent, 1˜15 parts of toughening agent, 0.4˜5 parts of silane coupling agent, and 0.4˜5 parts of cationic curing agent; wherein, the conductive particles include conductive particles with a three-dimensional dendritic microstructure. The conductive paste of the disclosure has the characteristics of good conductivity, short curing time, strong adhesion, and capability for long-term operation at room temperature.

Epoxy conductive paste and preparation method and application thereof

A front-side conductive paste for a crystalline silicon solar cell chip is provided. The front-side conductive paste for a crystalline silicon solar cell chip includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent. The oxide etching agent contains at least 10-40% of MgO, 0.1-5% of PbO, and 5-30% of LiO based on 100% by mole, with the molar ratio of MgO:PbO being 10:5&#x2dc;40:0.1, and the mole ratio of MgO:LiO being 10:30&#x2dc;40:5. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

Conductive paste for semiconductor device and preparation method

A front-side conductive paste for a crystalline silicon solar cell is provided. The front-side conductive paste for a crystalline silicon solar cell includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent, where based on 100% by mole of the oxide etching agent, the oxide etching agent includes 15-30% of PbO; 25-40% of TeO; 8.0-15.0% of LiO; 9.0-20.0% of SiO; 5.0-15.0% of BiO; 0.5-10.0% of ZnO; and either one or both of 0.1-10.0% of MgO and 0.1-10.0% of CaO; and no more than 5.0% of an oxide of additional metal elements. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

Front-side conductive paste for crystalline silicon solar cell, preparation method therefor, and solar cell

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Shenzhen, China

Fengzhen Sun