Delphi Technologies, Inc.

Fenglian Chang

Gregory Keller Rasmussen

Jinping Zhang

Terry Jack Gold

Rick Daniel Kerr

Gamdur S Mann

Carlos Augusto Valdes

Earl Wayne Lankheet

David Thompson

Kerry J Kruske

Maryann G Seibert

Disclosed herein is a method of making a sensing element comprising forming an electrically conductive element, wherein the sensing element comprises a metal selected from the group consisting of Pd and alloys and combinations comprising Pd; and wherein the electrically conductive element is thermally stable at temperatures as high as 1,200&#xb0; C.

Sensing element and method of making the same

A method for forming an electrode comprises: combining a platinum precursor with a gold precursor to form an electrode ink; forming the electrode ink into an electrode precursor; firing the electrode precursor to form the electrode; treating the electrode in an environment having an oxygen partial pressure of less than or equal to 500 ppm oxygen for a period of time sufficient produce an electrode with an exposed surface gold concentration of greater than or equal to about 6 times a bulk gold concentration in the electrode.

Methods of treating electrodes and gas sensors comprising the electrodes

A method for producing thin film deposits of ternary shape-memory alloys using an ion sputtering deposition process comprising using a hot pressed metal powder composition target.

Production of ternary shape-memory alloy films by sputtering using a hot pressed target

Disclosed is a method for producing ternary shape-memory alloy films employing sputtering process techniques using krypton as a process gas.

Method for producing NiTiHf alloy films by sputtering

A process is provided for forming a thin film deposit of a Ni&mdash;Ti&mdash;Hf ternary shape memory alloy on a substrate by magnetron sputtering deposition having high transformation temperatures and good shape-memory and mechanical properties. The method of forming a thin film deposit of a ternary shape memory alloy on a substrate by sputtering deposition comprises arranging a Ni&mdash;Ti&mdash;Hf target and a substrate within a deposition chamber, maintaining a working distance from the target to the substrate of about 83 mm to 95 mm; heating the substrate to a temperature high enough to induce in-situ crystallization; introducing a krypton working gas into the deposition chamber; applying appropriate level of deposition power so that the deposition rate is from about 6 &angst; per second to about 120 &angst; per second; and, depositing a Ni&mdash;Ti&mdash;Hf shape memory alloy film having a composition ranging from about Ni (TiHf) to Ni (TiHf) .

Process for deposition of sputtered shape memory alloy films

A method for producing thin film deposits of binary shape-memory alloys using an ion sputtering deposition process comprising using a hot pressed metal powder composition target.

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Grand Blanc, MI, United States of America

Fenglian Chang