Boe Technology Group Co., Ltd.

Beijing Naura Microelectronics Equipment Co., Ltd.

Mianyang Boe Optoelectronics Technology Co., Ltd.

Beijing Nmc Co., Ltd.

Fenggang Zhang

Tao Chen

Peijun Ding

Mengxin Zhao

Feng Lv

Hsinju Ho

Honglei Hai

A display panel is provided. The display panel includes: a substrate, and a light-emitting device, an encapsulation layer and an auxiliary barrier which are disposed on the substrate. The light-emitting device is disposed in a display area, and the auxiliary barrier is disposed in a non-display area. A height of the auxiliary barrier is greater than a distance between a side of the encapsulation layer away from the substrate and the substrate.

Display panel, method for manufacturing same, and display apparatus

Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

Process chamber and semiconductor processing apparatus

A plasma processing apparatus () comprises an outer shell () which is provided with a reaction chamber () in the interior, a bottom electrode which is arranged in the reaction chamber () and a cantilever support device () which goes through the outer shell () and supports the bottom electrode. The cantilever support device () is pivotally mounted on the side wall of the outer shell () and can rotate in the outer shell (). The plasma processing apparatus () further comprises a locating device so as to selectively fix the relative position of the cantilever support device () and the outer shell ().

Plasma processing apparatus

Growing community of inventors

Beijing, China

Fenggang Zhang