Nanjing University

Suzhou Radiant Photovoltaic Technology Co., Ltd

Suzhou Globalpeak High-tech Co., Ltd.

Changzhou Yooksmart Innovation Co., Ltd.

Feng Zhou

Dong Zhou

Hai Lu

Weizong Xu

Fangfang Ren

Fei Xu

Jianrong Xu

Lecheng Zhou

HongFei Nie

Wenzhong Bao

Can Zou

Yufeng Xie

Yu Rong

A wide bandgap semiconductor structure for an irradiation characteristic test includes a substrate with metal plates and a wide bandgap semiconductor part. The wide bandgap semiconductor part includes a gallium nitride layer, a barrier layer, P-type gallium nitride layers, source ohmic metal layers, and drain ohmic metal layers. The P-type gallium nitride layers are connected to a gate interconnection metal layer via gate metal layers and metal lead wires. A gate top metal layer is provided on the gate interconnection metal layer. Each source ohmic metal layer is provided with a source interconnection metal layer and source top metal layers. Each drain ohmic metal layer is provided with a drain interconnection metal layer and drain top metal layers. The wide bandgap semiconductor part is connected to the metal plates through the source top metal layers, the drain top metal layers, and the gate top metal layer.

Wide bandgap semiconductor structure for irradiation characteristic test and preparation method thereof

The present invention discloses a GaN HEMT device for irradiation damage detection which comprises a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer. A p-type gallium nitride layer is provided on the barrier layer. A drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the gallium nitride layer. A Schottky metal layer is provided on the p-type gallium nitride layer. A first ohmic metal layer and a second ohmic metal layer are respectively located at an inner side and an outer side of the p-type gallium nitride layer and provided on the barrier layer. The second ohmic metal layer includes inner gear electrodes and outer gear electrodes, which are interdigital with each other.

GaN HEMT device for irradiation damage detection and detection and manufacturing method therefor

Wireless remote control

The present invention discloses a multi-directional intelligent enema machine, which comprises a first air pump, a first reversing valve, a medicine feeding unit, a first check valve, a heating unit and a first insertion tube which are sequentially connected, and further comprises a first flushing unit, a second flushing unit, a second air pump, an air intake unit, a waste discharge unit and a circuit control unit. The units are connected by a pipeline and controlled and monitored by the circuit control unit. The enema machine of the present invention is safe, reliable, efficient and convenient, and has the functions of liquid infusing, flushing, waste discharging and mixing the intake air and liquid, and can monitor the pressure, temperature and liquid level and so on at the same time.

Multi-directional intelligent enema machine

A fault detection and positioning system for a cell panel in a large-scale photovoltaic array, includes a first photovoltaic panel fault detection and positioning system, a second photovoltaic panel fault detection and positioning system, and/or a third photovoltaic panel fault detection and positioning system. The detection and positioning system can detect faults of panels in the photovoltaic array in real time, especially accurately positioning a photovoltaic panel in which a fault occurs; the number of sensors can be minimized, so that the detection costs can be reduced; and the system can be easily implemented and mounted in existing power stations.

Fault detection and positioning system for cell panel in large-scale photovoltaic array

Growing community of inventors

Jiangsu, China

Feng Zhou