Taiwan Semiconductor Manufacturing Comp. Ltd.

Feng Yuan Hsu

Ching-Hsiang Hsu

Chi-Ming Yang

Chyi Shyuan Chern

Tran-Hui Shen

James Jeng-Jyi Hwang

Chun-Lin Louis Chang

Tsiao-Chen Wu

Chung-Chieh Lee

Hsu-Kai Chang

Ji James Cui

A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.

EUV photomask and manufacturing method of the same

A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the fractions are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

Reticle-masking structure, extreme ultra violet apparatus, and method of forming the same

A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.

A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.

A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The paramagnetic part includes a plurality of fractions disposed on a plurality of protrusion structures. In some embodiments, the protrusion structures are irregularly arranged. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

Reticle-masking structure, extreme ultraviolet apparatus, and method of forming the same

A polishing pad for CMP is provided. The polishing pad includes a layer of material having a surface, a plurality of grooves indented into the surface in the layer of material, and a fluorescent indicator in the layer of material. Each of the plurality of grooves has a first depth, the fluorescent indicator has a second depth, and the second depth is equal to or less than the first depth.

Apparatus and methods for chemical mechanical polishing

An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.

Ellipsometer and method for estimating thickness of film

A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

Apparatus and method for generating an electromagnetic radiation

A light generation system is provided. The light generation system includes a vaporization device, a laser device and a lens structure. The vaporization device is configured to vaporize a metal-nonmetal compound to generate a metal-nonmetal precursor gas. The laser device is configured to provide laser light, and irradiate the metal-nonmetal precursor gas released from the vaporization device with the laser light to emit a light signal. The lens structure is configured to direct the light signal toward a photomask used in a lithography process.

Light generation system using metal-nonmetal compound as precursor and related light generation method

A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The magnetic substrate has a magnetic field, and the paramagnetic part has an induced magnetic field in a direction of the magnetic field of the magnetic substrate. The paramagnetic part includes a rough surface defined by a plurality of protrusion structures of the paramagnetic part. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

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Yilan County, Taiwan

Feng Yuan Hsu