Au Optronics Corporation

Feng-Yuan Gan

Han-Tu Lin

Yu-Min Lin

Yue-Shih Jeng

Hsin-Li Chen

Chih-Jen Hu

Chih-Ming Chang

Ting-Chang Chang

Chrong-Jung Lin

Ya-Chin King

Kuo-Lung Fang

Yen-Heng Huang

Chia-Tien Peng

Chih-Wei Chao

An-Thung Cho

Chien-Sen Weng

Zeng-De Chen

Kun-Chih Lin

Kuo-Yuan Tu

Shu-Chin Lee

Yu-Wei Liu

Hui-Fen Lin

Kuan-Yi Hsu

Chung-Yu Liang

Wen-Jen Chiang

Chih-Hung Shih

Ta-Wen Liao

Wei-Hung Kuo

Jia-Fam Wong

Tsung-Chin Cheng

Weng-Bing Chou

Pi-Chun Yeh

Ching-Chieh Shih

Tsung-Yi Hsu

Yeong-Shyang Lee

Chih-Yang Chen

An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.

Electrode structure of a transistor for increasing and stabilizing current flowing through drain electrode to source electrode, and pixel structure and display apparatus comprising the same

Electrode structure of a transistor, and pixel structure and display apparatus comprising the same

A photo detector and related fabricating method are disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer. The patterned conductive layer is disposed on the dielectric layer. The inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region. The first electrodes are electrically connected to the first patterned semiconductor layer.

Method for fabricating photo detector

An optical compensation film includes an optical film and a retardation film. The optical film provides a plate retardation in the direction of thickness (Rth), while the retardation film is disposed on the optical film. The retardation film includes first retarders and second retarders, wherein the first retarders are disposed on at least partial areas of the optical film and provide a first planar retardation (Ro); the second retarders are disposed on partial areas of the optical film but outside the first retarders and provide a second planar retardation (Ro) and the first planar retardation (Ro) is different from the second planar retardation (Ro). The above-mentioned optical compensation film is capable of compensating the displays for different display areas in a liquid crystal display panel. In addition, the present invention also provides a fabricating method of optical compensation film.

Fabricating method of an optical compensation film

A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.

Display panel

A dual view display structure and a method for producing the same are provided. First, a display panel is provided. Then, a patterned barrier layer is formed on a transparent substrate. The transparent substrate with the patterned barrier layer is attached to the display panel. Because there is a gap between the display panel and the patterned barrier layer, a liquid transparent material is injected into the gap to form a transparent material layer to fill the gap. The invention can not only increase the viewing angles of the dual view display, but also increase the production yield.

Dual-view display panel structure and method for producing the same

A dual-gate transistor includes a first gate formed on a substrate, a first dielectric layer covering the first gate and the substrate, a semiconductor layer formed on the first dielectric layer, first and second electrodes formed on the semiconductor layer and spaced with an interval in order to separate each other, a second dielectric layer covering the first and second electrodes, and a second gate formed on the second dielectric layer, in which at least one of the first and second gates is non-overlapped with the second electrode.

Dual-gate transistor and pixel structure using the same

An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.

Optical reflected touch panel and pixels and system thereof

A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.

Thin film transistor structure

A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.

Copper conducting wire structure and fabricating method thereof

In one aspect of the invention, the method of forming a TFT array panel includes forming a patterned first conductive layer on a substrate, forming a gate insulating layer on the patterned first conductive layer and the substrate, forming a patterned semiconductor layer on the gate insulating layer, forming a patterned second conductive layer, forming a patterned passivation layer on the patterned second conductive layer and the substrate, and forming a patterned transparent conductive layer on the patterned passivation layer.

Apparatus and method for reducing photo leakage current for TFT LCD

A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer with a second state, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.

Photo detector and method for fabricating the same

Optical compensation film and liquid crystal display panel using the same

A driving voltage adjusting device for a microelectromechanical optical (MEMO) device. The adjusting device comprises a parameter generator and a driving device. The driving device outputs an adjusting driving voltage to the MEMO device to a parameter from the parameter generator.

Method and device for adjusting driving voltage of microelectromechanical optical device

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Hsinchu, Taiwan

Feng-Yuan Gan