National Taiwan University

Industrial Technology Research Institute

Angstron Materials (asia) Limited

Feng-Yu Tsai

Che-Chen Hsu

Bor Z Jang

Aruna Zhamu

Chih-Yung Huang

Chun-Ting Chou

Chien-Hua Chen

Ching-Chiun Wang

Jen-Rong Huang

Kuo-Lun Tung

Shih-Chin Lin

Fan-Chun Meng

Kang-Feng Lee

Hung-Wei Liu

Liang-Hsun Chen

Chin-Chuan Chang

Yi-Rui Chen

Ming Horn Zheng

Syue-Jhao Jhuo

Dung-Yue Su

Allen Huang

Guo-Cyuan Fang

The present invention provides an omniphobic membrane and application thereof. The omniphobic membrane comprises a porous substrate which has a pore size between 0.4 and 2 &#x3bc;m, a top coat, and an interface layer between the porous substrate and the top coat, and the omniphobic membrane has a carbon/silicon ratio between 40 and 60, and a hierarchical re-entrant structure. Furthermore, both of a process for fabricating the omniphobic membrane and a method for desalination of a liquid by membrane distillation are provided in the present invention.

Omniphobic membranes and application thereof

A graphene dispersion includes a graphene material and a polymerizable monomer. The polymerizable monomer has a structure including the first part and the second part. The first part is at one end of the structure and includes at least one benzene ring, and the second part is at another end of the structure and has polarity.

Graphene dispersion and graphene reinforced polymer

Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.

Encapsulation film, package structure utilizing the same, and method for forming the package structure

A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition equipment through different sources, wherein the oxide precursors are consecutively introduced into the atomic layer deposition equipment at the same time, so that the oxide precursors are simultaneously present in the atomic layer deposition equipment, to form a uniform mixture of oxide precursors in a single adsorbate layer for settling onto a substrate in the atomic layer deposition equipment. Then, an oxidant is provided to react with the oxide precursors to form a single multi-oxide atomic layer. The above mentioned steps are repeated to form a plurality of multi-oxide atomic layers.

Method for forming a transparent conductive film by atomic layer deposition

This invention discloses that photolithography can be made compatible with the production of electronic devices containing sensitive materials, if the sensitive materials are over-coated with an ultra-thin layer of non-reactive materials (e.g. inorganic oxides) before undergoing photolithographic patterning. This protecting layer isolates the sensitive materials from solvents and etching reactants used in photolithographic patterning, and does not need to be removed from the sensitive materials after patterning is completed. This invention enables photolithography to be applied to the production of electronic devices containing sensitive materials, facilitating the development of commercially viable production processes for these devices.

Method for forming electronic devices by using protecting layers

Growing community of inventors

Taipei, Taiwan

Feng-Yu Tsai