Taiwan Semiconductor Manufacturing Comp. Ltd.

Feng-Wei Kuo

Chewn-Pu Jou

Lan-Chou Cho

Huan-Neng Chen

Wen-Shiang Liao

Min-Hsiang Hsu

Chan-Hong Chern

Robert Bogdan Staszewski

Chih-Tsung Shih

Weiwei Song

Stefan Rusu

Chih-Chang Lin

William Wu Shen

Hung-Yi Kuo

Kuang-Kai Yen

Tsung-Hsiung Lee

Chih-Wei Tseng

Hsing-kuo Hsia

Kai Xu

Chen-Hua Douglas Yu

Chung-Shi Liu

Hao-Yi Tsai

Cheng-Chieh Hsieh

Hsing-Kuo Hsia

Yu-Ling Lin

Hui Yu Lee

Hsien-Yuan Liao

Yen-Jen Chen

Chung-Ming Weng

Hui-Yu Lee

Cheng-Tse Tang

Jianglin Du

Yu-Hsiang Hu

Fu-Lung Hsueh

Tsung-Yuan Yu

Shen-Iuan Liu

Hua-Kuei Lin

Che-Hsiang Hsu

You-Jen Wang

Sandro Binsfeld Ferreira

A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.

Semiconductor device including waveguide heater

A semiconductor structure is provided. The semiconductor structure includes a dielectric layer, a first waveguide structure, a reflective layer, a semiconductive layer, and a micro-lens. The first waveguide structure is disposed in the dielectric layer and extends along a first direction. The reflective layer is disposed in the dielectric layer and includes an inclined surface configured to redirect an optical signal from a second direction to the first direction. The semiconductive layer is disposed over the dielectric layer. The micro-lens is disposed at the semiconductive layer, wherein an optical signal travels into the semiconductive layer through the micro-lens along the second direction. A method of manufacturing the semiconductor structure is also provided.

Semiconductor structure and method of manufacturing the same

This application relates to a device for signal transmission (e.g., radio frequency transmission) and a method for forming the device. For example, the method includes: depositing an insulating layer that includes polybenzobisoxazole (PBO) on a carrier; forming a backside layer including polyimide (PI) over the adhesive layer; forming a die-attach film (DAF) over the backside layer; forming one or more through-insulator via (TIV)-wall structures and one or more TIV-grating structures on the second backside layer; placing a die, such as a radio frequency (RF) integrated circuit (IC) die, on the DAF; encapsulating the die, the one or more TIV-wall structures, and the one or more TIV-grating structures, with a molding compound to form an antenna package including one or more antenna regions; and forming a redistribution layer (RDL) structure on the encapsulated package. The RDL structure can include one or more antenna structures coupled to the die. Each of the one or more antenna structures can be positioned over the one or more antenna regions.

Antenna package for signal transmission

A package structure comprises photonic dies and an interposer structure. Each photonic die includes a dielectric layer and a first grating coupler embedded in the dielectric layer. The interposer structure is disposed below the photonic dies. The interposer structure includes an oxide layer and a second grating coupler embedded in the oxide layer. The photonic dies are optically coupled through the first grating couplers of the photonic dies and the second grating coupler of the interposer structure.

Package structure having grating coupler and manufacturing method thereof

A thermally tunable waveguide including an optical waveguide and a heater is provided. The optical waveguide includes a phase shifter. The heater is disposed over the optical waveguide. The heater includes a heating portion, pad portions and tapered portions. The heating portion overlaps with the phase shifter of the optical waveguide. The pad portions are disposed aside of the heating portion. Each of the pad portions is connected to the heating portion through one of the tapered portions respectively.

Thermally tunable waveguide and photonic integrated circuit component having the same

An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.

Optical device for coupling light and method for fabricating the same

A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

Method of fabricating semiconductor structure with heating element

A method and system for generating a physical layout for a grating coupler integrated in a photonically-enabled circuit are disclosed herein. In some embodiments, the method receives a parametrized wavelength, a parametrized first refractive index, a parametrized second refractive index, a parametrized taper length, a parametrized width, a parametrized grating length, and a parametrized incident angle of the optical beam incident onto the grating coupler and generates a physical layout for the grating coupler based on the received parametrized inputs, the generating of the physical layout is according to a predefined model, and outputs the physical layout of the grating coupler for manufacturing under a semiconductor fabrication process.

Apparatus and method for generating a parameterized waveguide optical elements

A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.

Optical waveguide apparatus and method of fabrication thereof

A package structure includes a photonic die, an electronic die and a gap filling layer. The photonic die includes a dielectric layer, a silicon layer, a reflector structure and a plurality of connection pads. The silicon layer is disposed on the dielectric layer, wherein the silicon layer includes a grating coupler having a plurality of first trench patterns with a first depth and a plurality of second trench patterns with a second depth, wherein the first depth is different than the second depth. The reflector structure is embedded in the dielectric layer below the grating coupler. The connection pads are disposed over the dielectric layer. The electronic die is disposed on the photonic die, wherein the electronic die includes a plurality of bonding pads bonded to the connection pads of the photonic die. The gap filling layer is disposed on the photonic die and surrounding the electronic die.

Package structure, semiconductor device comprising grating coupler and reflector structure embedded in the dielectric layer

Disclosed is a system and method for communication using an efficient fiber-to-chip grating coupler with a high coupling efficiency. In one embodiment, a method for communication, includes: transmitting optical signals between a semiconductor photonic die on a substrate and an optical fiber array attached to the substrate using at least one corresponding grating coupler on the semiconductor photonic die, wherein the at least one grating coupler each comprises a plurality of coupling gratings, a waveguide, a cladding layer, a first reflection layer and a second reflection layer, wherein the plurality of coupling gratings each comprises at least one step in a first lateral direction and extends in a second lateral direction, wherein the first and second lateral directions are parallel to a surface of the substrate and perpendicular to each other in a grating plane, wherein the first reflection layers are configured such that the plurality of coupling gratings is disposed between the first reflection layer and the cladding layer, wherein the second reflection layer are configured such that the cladding layer is disposed between the second reflection layer and the waveguide.

Fiber-to-chip grating coupler for photonic circuits

A package structure includes a first die, a second die over and electrically connected to the first die, an insulating material around the second die, a first antenna extending through the insulating material and electrically connected to the second die, the first antenna being adjacent to a first sidewall of the second die, wherein the first antenna includes a first conductive plate extending through the insulating material, and a plurality of first conductive pillars extending through the insulating material, wherein the first conductive plate is between the plurality of first conductive pillars and the first sidewall of the second die.

Antenna apparatus and method

Systems and methods for suppressing and mitigating harmonic distortion in a circuit are disclosed. In one example, a disclosed circuit includes a radio frequency (RF) oscillator and a power amplifier. The RF oscillator is configured to generate an RF signal. The power amplifier is configured to generate an amplified RF signal based on the RF signal. The power amplifier includes a transformer including a primary winding and a secondary winding, and a feedback capacitor electrically coupled to the primary winding and the secondary winding.

Systems and methods for suppressing and mitigating harmonic distortion in a circuit

The present disclosure is directed to a method for forming metal insulator metal decoupling capacitors with scalable capacitance. The method can include forming a first redistribution layer with metal lines on a portion of a polymer layer, depositing a photoresist layer on the first redistribution layer, and etching the photoresist layer to form spaced apart first and second TIV openings in the photoresist layer, where the first TIV opening is wider than the second TIV opening. The method can further include depositing a metal in the first and second TIV openings to form respective first and second TIV structures in contact with the metal line, removing the photoresist layer, forming a high-k dielectric on a top surface of the first and second TIV structures, and depositing a metal layer on the high-k dielectric layer to form respective first and second capacitors.

Embedded metal insulator metal structure

A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.

Growing community of inventors

Hsinchu County, Taiwan

Feng-Wei Kuo