Novellus Systems Incorporated

Cisco Technology, Inc.

University of California

Palo Alto Networks, Inc.

Feng Wang

Brian Lu

Victor Y Lu

Wai-Fan Yau

Derrick Pallas

Haiying Fu

Nerissa Sue Draeger

Apurv Bhartia

Raashina Humayun

Patrick A Van Cleemput

Mark Yam

George D Kamian

Krishnan Shrinivasan

Dong Niu

Michelle T Schulberg

Steve Gentile

Bart Jan Van Schravendijk

Michal Danek

Alexander K Zettl

Yushan Yan

Maxim Kelman

Sean C Chang

Adrianne K Tipton

Qingguo Wu

Vishal Gauri

Simon Barber

David A Agard

Yifan Cheng

Shuang Gu

Lakshminarayana Nittala

Mark Hendrick, Jr

Jianing Sun

Bo Chen

Guangquan Lu

Jairo Velasco, Jr

Halleh B Balch

Krishna Shrinivasan

Eugene Palovcak

Dillon Wong

Long Ju

Salman Kahn

Simon Eric Miani Barber

Juwon Lee

Chad E Germany

Jason Horng

Michael F Crommie

Herein are innovations that enable facile cryo-EM analysis of diverse samples. Methods of functionalizing sample grids for cryo-EM are described, including methods of creating high quality graphene oxide films on cryo-EM substrates. The cryo-EM sample substrates are functionalized with affinity molecules that efficiently concentrate sample molecules and other specimen types on the grid, away from the air-water interface. Affinity groups include amines and proteins such as tagging system proteins and peptides that can be used to capture diverse sample types with high affinity. Optionally, spacers such as PEG chains are used to place sample particles away from the substrate surface, reducing substrate-induced artifacts.

Graphene oxide affinity sample grids for Cyro-EM

Internet of Things (IoT) device classification is disclosed. A byte frequency pattern associated with network traffic of an IoT device is received. The received pattern is used to determine a classification for the IoT device. The classification is provided to a security appliance. The security appliance is configured to apply a policy to the IoT device based at least in part on the classification.

Automating IOT device identification using statistical payload fingerprints

Disclosed is a method includes treating, at an access point, a data flow between a first station and a second station during a first period of time as a non-fast flow. After a condition is met, the method includes marking the data flow as a fastACK flow during a second period of time and during the second period of time, storing data frames in the data flow at the access point to yield stored data frames. Next, the method includes generating a spoofed TCP acknowledgment signal on behalf of the first station and associated with the stored data frames and transmitting the spoofed TCP acknowledge signal to the second station.

System and method for managing data transfer between two different data stream protocols

A disclosed method is performed at an access point including a processor and non-transitory memory. The method includes receiving a request message from a client device, where the request message includes a request for an allocation of a wireless channel for the client device from the access point. The method further includes exchanging candidate and load information with a plurality of other access points. The method additionally includes selecting a preferred access point from the access point and the plurality of other access points based on the candidate and load information exchanged with the plurality of other access points. The method also includes facilitating the allocation of the wireless channel for the client device from the preferred access point.

Method and device for dynamic and seamless link selection

An optical sensing system includes a planar optical waveguide having a first surface for detection and a second surface for coupling light. The optical sensing system includes a functional layer integral with the first surface of the planar optical waveguide, and a coupling layer in contact with the second surface of the planar optical waveguide, the coupling layer having a lower refractive index than the planar optical waveguide. The optical sensing system includes an optical source arranged to illuminate at least a portion of the second surface of the planar optical waveguide through the coupling layer with substantially critical optical coupling. The optical sensing system also includes an optical detector arranged to receive a portion of light from the optical source after being reflected from the first surface of the planar optical waveguide and passing through the coupling layer.

Optical sensing with critically coupled planar waveguide with optional integration of layered two-dimensional materials

Aspects of the disclosed technology address the problems of calculating and performing channel assignments for access points (APs) in a wireless network. In some aspects, a process for performing channel assignment can include steps for identifying multiple APs in a network, each of the wireless APs being associated with an initial channel assignment, selecting an AP from among the wireless APs in the network, determining a channel quality for the initial channel assignment associated with the AP, and selecting a new channel for the AP based on the channel quality. In some aspects, the process further includes steps for selecting a second AP, determining a channel quality for the initial channel assignment associated with the second AP, and selecting a new channel for the second AP based on the channel quality. Systems and machine-readable media are also provided.

Hierarchical channel assignment in wireless networks

This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

Local doping of two-dimensional materials

Provided are methods of filling gaps on a substrate by creating flowable silicon oxide-containing films. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrate. In certain embodiments, the methods involve using a catalyst in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant.

CVD flowable gap fill

The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.

Single-chamber sequential curing of semiconductor wafers

The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Method for reducing stress in porous dielectric films

A family of functionalized polymers is provided capable of forming membranes having exceptional OHionic conductivity as well as advantageous mechanical properties, which may be applied to membranes including such polymers for use in, e.g., AEMFC/HEMFC fuel cells. Preferred functional groups include a quaternary phosphonium, and the polymer may specifically be (tris(2,4,6-trimethoxyphenyl) phosphine)functionalized phosphonium polysulfone hydroxide, ECL-PVBC-QPOH, or QPOH based on any of the commercial polumers including polycarbonate (PC), poly(2,6-dimethyl-1,4-phenylene oxide) (PPO), polyetherimine (PEI), poly(ether sulfone) (PES), poly(phenylene sulfoxide) PPS, poly(ether ether ketone) (PEEK), or polybenzimidazole (PBI), polyvinyl chloride (PVC). An ionomer membrane may include polysulfone based TPQPOH, ECL-PVBC-QPOH, and/or PPO.

Highly basic ionomers and membranes and anion/hydroxide exchange fuel cells comprising the ionomers and membranes

Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0.13 &#x3bc;m.

Density gradient-free gap fill

Growing community of inventors

Fremont, CA, United States of America

Feng Wang