Applied Materials, Inc.

Honeywell International Inc.

Oplink Communications, Inc.

Baidu USA LLC

Alta Devices, Inc.

Apple Inc.

Motorola Mobility LLC

Walmart Apollo, LLC

Spansion Llc.

Aat Bioquest, Inc.

Feng Quan Liu

Liang-Yuh Chen

Stan D Tsai

Alain Duboust

Yan Wang

Lizhong Sun

Rashid Mavliev

Yongqi Hu

Siew Neo

Mark Joseph Saly

David P Thompson

Paul D Butterfield

Kreisler S Lau

Boris Korolev

Mei Yin Chang

Bhaskar Jyoti Bhuyan

Antoine P Manens

Jeffrey W Anthis

David Nalewajek

Wen-Chiang Tu

Yuchun Wang

Shijian Li

Ratson Morad

Ralph M Wadensweiler

David Michael Thompson

Shou-Sung Chang

Kun Xu

Lakmal Charidu Kalutarage

Roger Leung

Boguslaw A Swedek

Hua Chung

Dominic J Benvegnu

Xianmin Tang

Schubert S Chu

Sang Ho Yu

Joung Joo Lee

Wei-Zhong Li

Daniel A Carl

Ben-Li Sheu

Doreen Wei Ying Yong

Alexander Jansen

Jiangtao Hu

Seshadri Ganguli

Gang He

Avgerinos V Gelatos

Qi Luo

Jinghao Miao

Yixiong Yang

Wei-Yung Hsu

Naomi Yoshida

Sen-Hou Ko

Adolph Miller Allen

Gregg Higashi

Fan Zhang

Lakshmanan Karuppiah

Kecheng Xu

Wei V Tang

Wenhui Wang

Jacqueline S Wrench

Melissa J Archer

Brendan M Kayes

Xiangjin Xie

You Wang

Liqi Wu

Hongyi Sun

Yu Zheng

David Knapp

Jiang Lu

Daping Yao

David Maxwell Gage

Wei Luo

Matthew S Rogers

Sasson Roger Somekh

Paul F Ma

Rongjun Wang

Barry Lee Chin

John Leonard Sudijono

Hung Phi Nguyen

Naoto Matsuyuki

Zhenjun Diwu

Jianshe Tang

Xinyu Fu

Clifford Alan Zitlaw

Donald J Olgado

Feng Chen

Donald J K Olgado

Ingemar Carlsson

Annamalai Lakshmanan

Tae Hong Ha

Abraham Ravid

Daxin Mao

Michael G Haverty

Alessandro Magnani

Ming-Kuei Tseng

Haitao Guo

Stephen Jew

Andrea Leoncini

Paul G Apen

Martin S Wohlert

Shirish A Pethe

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Molybdenum(0) precursors for deposition of molybdenum films

A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound, and after forming the passivation layer on the first layer, performing at least one of: depositing a third layer on the second layer, or etching the second layer.

Benzyl compound passivation for selective deposition and selective etch protection

Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI, where R is one or more of a C-Calkyl, C-Ccycloalkyl, C-Calkenyl, or C-Calkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

Method of depositing metal films

Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

Methods for depositing blocking layers on conductive surfaces

In one embodiment, an emergency vehicle detection system can be provided in the ADV travelling on a road to detect the presence of an emergency vehicle in a surrounding environment of the ADV using both audio data and visual data. The emergency vehicle detection system can use a trained neutral network to independently generate a detection result from the audio data, and use another trained network to independently generate another detection result from the visual data. The emergency vehicle detection system can fuse the two detection results to determine the position and moving direction of the emergency vehicle. The ADV can take appropriate actions in response to the position and moving direction of the emergency vehicle.

Emergency vehicle audio and visual detection post fusion

Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

Selective metal removal with flowable polymer

Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

Low temperature deposition of iridium containing films

Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and HO. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile MeGaY or MeGa. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

Methods for selective dry etching gallium oxide

An electronic device includes electrical components in a housing. The components may include optical components such as a display. Protective structures may be used to protect the optical components. The protective structures may include one or more protective transparent layers such as layers of glass or crystalline material such as sapphire. The protective transparent layers may be coated with an oleophobic coating. To enhance coating durability, catalyst may be used to help bond the oleophobic coating. An adhesion promotion layer such as a silicon oxide layer may be deposited on the transparent protective layer. A catalyst layer such as a layer of sodium fluoride may be deposited on the adhesion promotion layer. The oleophobic material may be evaporated or otherwise deposited on the catalyst layer. Heat and moisture may help the oleophobic material form chemical bonds with the adhesion promotion layer, thereby forming a durable oleophobic coating.

Oleophobic coatings for glass structures in electronic devices

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

Electronic device having an oxygen free platinum group metal film

A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.

Molybdenum thin films by oxidation-reduction

A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.

Chemical mechanical polishing with applied magnetic field

A system for retrieving products in response to a customer query includes a computing device configured to obtain query information characterizing a query initiated by the customer on an ecommerce marketplace and to determine embedding-based search results comprising a first list of items. The computing device is also configured to obtain legacy search results comprising a second list of items and to blend the embedding-based search results with the legacy search results to obtain blended search results. The computing device is also configured to send the blended search results to the customer.

Methods and apparatuses for providing search results using embedding-based retrieval

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San Jose, CA, United States of America

Feng Quan Liu