Suzhou Dabo New Material Technology Co., Ltd.

Feng Pan

Rui Wang

Mengxuan Qian

Rongxuan Su

Huiping Xu

An integrated device based on a third-generation semiconductor and a manufacturing method thereof are provided. The integrated device at least includes a SiC substrate, a buffer layer, a GaN film layer and a piezoelectric material layer; the SiC substrate includes a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN film layer at least includes a first GaN film layer stacked on the first buffer layer and a second GaN film layer stacked on the second buffer layer; the first SiC substrate, the first buffer layer, the first GaN film layer and the piezoelectric material layer which are stacked are used for forming a piezoelectric multi-layer film; the piezoelectric multi-layer film is used for forming a surface acoustic wave (SAW) filter.

Integrated device based on third-generation semiconductor and manufacturing method thereof

A dual-mode surface acoustic wave device and a preparation method thereof are provided. The dual-mode surface acoustic wave device includes a substrate, a piezoelectric layer and an interdigital electrode which are successively stacked in a selected direction. The thickness of the interdigital electrode is 10 nm-5 μm to excite a first-order horizontal shear wave mode, so that the dual-mode surface acoustic wave device has two acoustic wave modes, namely, a ground state horizontal shear wave and a first-order horizontal shear wave. The dual-mode surface acoustic wave device with two acoustic wave modes, namely, the ground state horizontal shear wave and the first-order horizontal shear wave can be prepared, so that the dual-mode surface acoustic wave device can support a filtering function in more frequency bands in 5G communication, and meets the development trend of miniaturization and broadband of surface acoustic wave filters.

Growing community of inventors

Suzhou, China

Feng Pan