Hewlett-packard Development Company, L.P.

Hewlett Packard Enterprise Development LP

Feng Miao

Jianhua Yang

Richard Stanley Williams

Wei Yi

Gilberto Medeiros Ribeiro

Shih-Yuan Wang

John Paul Strachan

Wei Guang Wu

Joshua Yang

Minxian Max Zhang

A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

High-reliability high-speed memristor

A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.

Memristor with channel region in thermal equilibrium with containing region

A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.

Memristors having mixed oxide phases

The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.

Multi-level memory cell with continuously tunable switching

A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.

Memristive device

A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.

Changing a memristor state

A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.

Graphene memristor having modulated graphene interlayer conduction

A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.

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Mountain View, CA, United States of America

Feng Miao