Beijing Naura Microelectronics Equipment Co., Ltd.

China Construction Engineering Design & Research Institute Co., Ltd

Feng Lv

Peijun Ding

Qiang Li

Ting Li

Yujie Yang

Mengxin Zhao

Hougong Wang

Fenggang Zhang

Guoqing Qiu

Zhimin Bai

Zhixing Wang

Shengjie Liu

Disclosed is an automatic color matching configuration method and device for marble, where the method includes the following steps: obtaining a to-be-repaired image of to-be-repaired marble for image recognition to determine a to-be-repaired contour in the to-be-repaired image; extending outward a preset distance along the to-be-repaired contour to generate a reference contour, and determining an area between the reference contour and the to-be-repaired contour as a reference area; filling a base coating into a to-be-repaired area in the to-be-repaired contour to form an initial base coat; determining a base pixel value based on a color ratio of the reference area, and performing base color matching on the initial base coat based on the base pixel value to obtain a current base coat.

Automatic color matching configuration method and device for marble

Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap exists therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=a&#x3b8;n+b(cos &#x3b8;)m+c(tan &#x3b8;)k+d, 0&#x3c;=n&#x3c;=2, 0&#x3c;=m&#x3c;=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.

Magnetron and magnetron sputtering device

Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

Process chamber and semiconductor processing apparatus

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Beijing, China

Feng Lv