Csmc Technologies Fab2 Co., Ltd.

Southeast University

Nanjing Legend Biotech Co., Ltd.

Feng Lin

Longxing Shi

Weifeng Sun

Chuan-Chu Chou

Shengli Lu

Siyang Liu

Shu Wu

Sheng Li

Shuai Yang

Kui Xiao

Liusong Yin

Jiaxing Wei

Hongfeng Jin

Yu Huang

Rongcheng Lou

Ruibin Cao

Xiang Qin

Chunxu Li

A semiconductor device and a manufacturing method therefor are disclosed. The method includes: providing a substrate of a first conductivity type; forming doped regions of a second conductivity type in the substrate, the doped regions including adjacent first and second drift regions, wherein the second conductivity type is opposite to the first conductivity type; forming a polysilicon film on the substrate, the polysilicon film covering the doped regions; forming patterned photoresist on the polysilicon film, which covers the first and second drift regions, and in which the polysilicon film above a reserved region for a body region between the first and second drift regions is exposed; and forming the body region of the first conductivity type in the reserved region by performing a high-energy ion implantation process, the body region having a top surface that is flush with top surfaces of the doped regions, the body region having a bottom surface that is not higher than bottom surfaces of the doped regions. The problem of morphological changes possibly experienced by the photoresist due to a high temperature in an etching process, which may lead to an impaired effect of the high-energy ion implantation process, can be circumvented.

Semiconductor device and manufacturing method therefor

A power semiconductor device includes: a substrate; drain metal; a drift region; a base region; a gate structure; a first conductive type doped region contacting the base region on the side of the base region distant from the gate structure; a source region provided in the base region and between the first conductive type doped region and the gate structure; contact metal that is provided on the first conductive type doped region and forms a contact barrier having rectifying characteristics together with the first conductive type doped region below; and source metal wrapping the contact metal and contacting the source region.

Power semiconductor device and manufacturing method therefor

The present application provides an antibody, such as a monoclonal antibody (mAb), or an antigen binding fragment thereof, that specifically recognizes PD-L1. Also provided are pharmaceutical compositions, or methods of making and using the antibody or antigen binding fragment thereof.

Antibodies and variants thereof against PD-L1

Growing community of inventors

Jiangsu, China

Feng Lin