First Solar, Inc.

Feng Liao

Rick C Powell

Zhibo Zhao

Jigish Trivedi

Dan Damjanovic

Kenneth Ring

Markus Gloeckler

Andrei Los

Gopal Mor

Gang Xiong

Rui Shao

Benjamin Milliron

Aaron Roggelin

Dan Mao

Wei Zhang

William Hullinger Huber

Arnold Allenic

Sergei Kniajanski

Xilin Peng

Oleh Petro Karpenko

Sachit Grover

Xiaoping Li

Hongying Peng

John Barden

Dingyuan Lu

Chungho Lee

Sreenivas Jayaraman

Daniel Damjanovic

Jing Guo

Chong Lim

Jason Kephart

Le Chen

Rajni Mallick

Wenming Wang

According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

Buffer layers for photovoltaic devices with group V doping

A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Photovoltaic devices and method of manufacturing

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Photovoltaic device including a p-n junction and method of manufacturing

A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5&#xd7;10/cmto 2.5&#xd7;10/cmvia any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and Pat higher P(=I*Vproduct) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased I, increased V, or both.

Ag-doped photovoltaic devices and method of making

A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

Photovoltaic device including a P-N junction and method of manufacturing

An improved feeder system and method for a vapor transport deposition system that includes a carrier gas bypass flow line to allow for continuous carrier gas flow to a vaporizer unit when a vibratory unit which supplies powdered material and carrier gas to the vaporizer unit is out of service. A process gas flow line to the vibratory unit may be included when the powdered material contains a powdered dopant in the material mix.

Feeder system and method for a vapor transport deposition system

A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

Photovoltaic device with protective layer over a window layer and method of manufacture of the same

A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

Method and system of providing dopant concentration control in different layers of a semiconductor device

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Perrysburg, OH, United States of America

Feng Liao