Csmc Technologies Fab2 Co., Ltd.

Feng Huang

Guipeng Sun

Guangtao Han

Feng Lin

Bing Zhao

Longjie Zhao

Huatang Lin

Liangliang Ping

Fengying Chen

Lixiang Liu

Provided are a laterally diffused metal oxide semiconductor field-effect transistor and a manufacturing method therefor. The method comprises: providing a wafer on which a first N well (), a first P well () and a channel region shallow trench isolating structure () are formed; forming a high-temperature oxidation film on the surface of the wafer by deposition; photoetching and dryly etching the high-temperature oxidation film, and reserving a thin layer as an etching buffer layer; performing wet etching, removing the etching buffer layer in a region which is not covered by a photoresist, and forming a mini oxidation layer (); performing photoetching and ion injection to form a second N well () in the first N well and form a second P well () in the first P well; forming a polysilicon gate () and a gate oxide layer on the surface of the wafer; and photoetching and injecting N-type ions to form a drain electrode () and a source electrode ().

Laterally diffused metal oxide semiconductor field-effect transistor and manufacturing method therefor

The present invention relates to a method for manufacturing a laterally insulated-gate bipolar transistor, comprising: providing a wafer having an N-type buried layer (), an STI (), and a first N well ()/a first P well () which are formed successively from above a substrate; depositing and forming a high-temperature oxide film on the first N well () of the wafer; performing thermal drive-in on the wafer and performing photoetching and etching on the high-temperature oxide film to form a mini oxide layer (); performing photoetching and ion implantation so as to form a second N well () inside the first N well () and second P wells () inside the first N well () and the first P well (); then successively forming a gate oxide layer and a polysilicon gate (), wherein one end of the gate oxide layer and the polysilicon gate () extends onto the second P well () inside the first N well (), and the other end extends onto the mini oxide layer () on the second N well (); and photoetching and injecting N-type ions between the mini oxide layer () and the STI () adjacent to the mini oxide layer () to form a drain electrode, and at the same time forming a source electrode () inside the second P well ().

Method for manufacturing laterally insulated-gate bipolar transistor

A lateral double diffused metal oxide semiconductor field-effect transistor includes semiconductor substrates, body regions positioned in the semiconductor substrates, drift regions positioned in the semiconductor substrates, source regions and a body leading-out region which are positioned in the body regions and spaced from the drift regions, a field region and drain regions which are positioned in the drift regions, and gates positioned on the surfaces of the semiconductor substrates to partially cover the body regions, the drift regions and the field region, wherein the field region is of a finger-like structure and comprises a plurality of strip field regions which extend from the source regions to the drain regions and are isolated by the active regions; and the strip field regions provided with strip gate extending regions extending from the gates.

Lateral double diffused metal oxide semiconductor field-effect transistor

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Jiangsu, China

Feng Huang