Boe Technology Group Co., Ltd.

Mobility Asia Smart Technology Co. Ltd.

Volkswagen Automatic Transmission (dalian) Co., Ltd.

Feng Gu

Shi Shu

Feng Zhang

Chuanxiang Xu

Fang He

Yaohui Gu

Teng Luo

Bin Zhang

Artur Ploetner

Shang Perry

Shangshang Yu

The present disclosure provides a counter substrate, a display panel, a display device, and fabricating method, further simplifying the fabricating process of the display panel by reducing the number of masking times required during the making of a spacer pattern and a frame light shielding pattern while achieving the frame light shielding function of the counter substrate and getting the counter substrate conductive with an array substrate. The fabricating method of the counter substrate comprises: forming a transparent electrode layer on a first base substrate; forming a black spacer pattern and a frame light shielding pattern at the same time on the transparent electrode layer, wherein the frame light shielding pattern comprises a first via hole that exposes a portion of the transparent electrode layer; and forming a conductive light shielding layer pattern in the first via hole.

Counter substrate, display panel, display device and fabricating method

A method for fabricating a thin film transistor includes providing a substrate (); forming a semiconductor layer () over the substrate (); forming a source-drain metal layer () over the semiconductor layer (); applying one patterning process to the semiconductor layer () and the source-drain metal layer () to form an active layer (), a source electrode (), and a drain electrode (); forming a gate insulating layer () and an interlayer insulating layer () that cover the active layer (), the source electrode (), and the drain electrode (); applying a patterning process to the interlayer insulating layer () to form a first window () in the interlayer insulating layer () to expose a portion of the gate insulating layer (); and forming a gate electrode () in the first window (). An orthogonal projection of the gate electrode () on the substrate () is in an orthogonal projection of the active layer () on the substrate ().

Thin film transistor and display substrate, fabrication method thereof, and display device

The invention provides an etching solution, comprising: 10 to 30 wt % of phosphoric acid; 2 to 20 wt % of nitric acid; 6 to 18 wt % of hydrofluoric acid; 5 to 10 wt % of hydrochloric acid; and water, wherein the weight percentages are based on the weight of the etching solution. The etching solution can be used for thinning the substrate in large-scale production, dissolving the precipitated impurities attached to the surface of the substrate after substrate thinning so as to remove effectively the impurities on the surface of the substrate, improve the qualified ratio and passed ratio of a product, and at the same time, provide the effective insurance for controlling the thickness of the substrate.

Etching solution

Embodiments of the disclosure provide an array substrate having via-hole conductive layer and display device. The array substrate includes: a thin film transistor; a passivation layer, covering the thin film transistor, the passivation layer having a via hole and the via hole exposing at least a portion of a drain electrode of the thin film transistor; a via-hole conductive layer, covering the portion of the drain electrode exposed at the via hole and connected to the drain electrode, and a reflectivity of the via-hole conductive layer being lower than a reflectivity of the drain electrode; and a pixel electrode, connected with the drain electrode through the via-hole conductive layer.

Array substrate having via-hole conductive layer and display device

Embodiments of the disclosure disclose an array substrate and a fabrication method thereof, and a display device. The fabrication method of the array substrate comprises: forming a thin film transistor; forming a passivation layer covering the thin film transistor, the passivation layer having a via hole and the via hole exposing at least a portion of a drain electrode of the thin film transistor; forming a via-hole conductive layer, the via-hole conductive layer covering the portion of the drain electrode exposed at the via hole and connected to the drain electrode; treating the via-hole conductive layer, so that a reflectivity of the via-hole conductive layer is lower than a reflectivity of the drain electrode; and forming a pixel electrode, the pixel electrode being connected with the drain electrode through the via-hole conductive layer.

Growing community of inventors

Beijing, China

Feng Gu