Semiconductor Manufacturing International (Shanghai) Corporation

Semiconductor Manufacturing International (Beijing) Corporation

Tencent Technology Company Limited

Feng Dou

Feng Chen

Xin Xie

Qing Chang

Xianming Zhang

Ling Tang

Leibin Yuan

The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region. The present disclosure may reduce a leakage current which is possibly generated between the conductive contact layer and the gate electrode, so as to improve the performance of the device.

Semiconductor device having a surface insulating layter and manufacturing method therefor

Semiconductor device having a surface insulator layer and manufacturing method therefor

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Shanghai, China

Feng Dou