Nxp B.v.

Feng Cong

Dongyong Zhu

Chao Chen

Fuchun Zhan

Jian Qing

Fang Liu

Guido Wouter Willem Quax

Tinghua Yun

XinDong Duan

Bo Cai

Zhouyi Luo

Tingting Pan

A MIS capacitor and a method of making the same. The capacitor includes a semiconductor substrate having a first part having a first conductivity type and contact regions for coupling the first part to an output node. The substrate has dielectric on a surface of the first part and electrodes on the dielectric. The substrate has a second part having a second conductivity type and a third part having the first conductivity type. The third part is coupleable to a supply voltage. The second part is located between the first part and the third part. The first part and the second part form a first p-n junction and the second part and the third part form a second p-n junction. A reference contact is provided for coupling the second part to a reference voltage. A further contact region is provided for coupling the second part to the output node.

MIS capacitor and method of making a MIS capacitor

An integrated circuit includes two N wells from two different devices in close proximity to each other with each N well biased by two different terminals. The N wells are at least partially surrounded by P type regions that are biased by a terminal. The integrated circuit includes conductivity reduction features that increase the resistivity of current paths to a P type regions of one device on a side closest the other device. The integrated circuit includes two conductive tie biasing structures each located directly over an N type region of the substrate and directly over a P type region of the substrate. The two conductive tie biasing structures are not electrically connected to each other and are not electrically coupled to each other by a conductive biasing structure.

Conductivity reducing features in an integrated circuit

The disclosure relates to a switched capacitor converter (SCC) with gate driving circuits for limiting currents provided by switching field effect transistors. Embodiments disclosed include an SCC with gate driver curcuits providing gate voltage signals to power FETs, each gate driver circuit comprising first and second gate driver modules and configured to operate in: a first mode in which the first gate driver module provides a gate voltage signal to a power FET that switches between first and second voltage rails by operation of first and second switches connected between the pair of voltage rails; and a second mode in which, in reponse to enabling of a current limit switching signal, the first gate driver module disables switching of one of the first and second switches and the second gate driver module operates to limit a current provided to the power FET.

Switched capacitor converter

A synchronous rectifier converts an AC input into a DC output. The synchronous rectifier has four switches controlled by four switch control modules. Each switch is connected between a different AC component and either the DC output or ground. Each switch control module has digitally assisted 'switch on' circuitry that detects 'on' bounces in the corresponding AC component to control when to turn on the corresponding switch and digitally assisted &#x201c;switch off&#x201d; circuitry that detects &#x201c;off&#x201d; bounces in the AC component to control when to turn off the corresponding switch. The &#x201c;switch on&#x201d; circuitry has a digitally assisted comparator to detect threshold crossings in the AC component, and the &#x201c;switch off&#x201d; circuitry has a digitally assisted programmable delay cell to turn off the switch for a predetermined duration following each detected threshold crossing.

Synchronous rectifier for wireless charging system

Gate-protection circuitry protects a transistor, such as a MOSFET, from large gate-to-source voltage differentials that can permanently damage the transistor's gate-oxide layer. A source-voltage detector selectively enables the gate-protection circuitry based on a source voltage of the transistor. The gate-protection circuit is implemented without any Zener diodes. The transistor may be a load switch that is selectively controlled to apply a supply voltage to a load.

Growing community of inventors

Shanghai, China

Feng Cong