Globalwafers Co., Ltd.

Feng-Chien Tsai

Zheng Lu

Chen-Yi Lin

Gaurab Samanta

Tse-Wei Lu

Jin Yong Uhm

Hong-Huei Huang

Chin-Hung Ho

Tung-Hsiao Li

YoungGil Jeong

Chih-Kai Cheng

Chun-Sheng Wu

Wei-Chen Chou

Sumeet S Bhagavat

Benjamin Michael Meyer

Chun-Chin Tu

Shan-Hui Lin

Chi-Yung Chen

Tapas Jain

Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

Methods for cleaning the pull cable of an ingot puller apparatus

Cleaning tools and methods for cleaning the pull cable of an ingot puller apparatus

Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.

Ingot puller apparatus having silicon feed tubes with kick plates

Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size

A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.

Single crystal growth susceptor assembly with sacrifice ring

Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy

A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Process for preparing ingot having reduced distortion at late body length

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Taipei, Taiwan

Feng-Chien Tsai