Taiwan Semiconductor Manufacturing Comp. Ltd.

Feng-chi Hung

Dun-Nian Yaung

Jen-Cheng Liu

Kuo-Cheng Lee

Min-Feng Kao

Chun-Hao Chou

Jeng-Shyan Lin

Sheng-Chau Chen

Sheng-Chan Li

Wen-I Hsu

Wen-Chang Kuo

Ming-Hsien Yang

Kuan-Fu Lu

A semiconductor image sensing structure includes a substrate having a first region and a second region, a metal grid in the first region, and a hybrid metal shield in the second region. The hybrid metal shield includes a first metallization layer, a second metallization layer disposed over the first metallization layer, a third metallization layer disposed over the second metallization layer, and a fourth metallization layer disposed over the third metallization layer. An included angle of the second metallization layer is between approximately 40° and approximately 60°.

Semiconductor image-sensing structure and method for forming the same

An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate. The image-sensor device also includes a doped isolation region in the semiconductor substrate and a dielectric film extending into the doped isolation region from a surface of the semiconductor substrate. A portion of the doped isolation region is between the dielectric film and the radiation-sensing region.

Mechanisms for forming image-sensor device with deep-trench isolation structure

A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, a metal grid disposed directly over the plurality of metal isolation features, and a plurality of microlens features disposed over the metal grid.

Image sensor

Growing community of inventors

HSIN-CHU COUNTY, Taiwan

Feng-chi Hung