Taiwan Semiconductor Manufacturing Comp. Ltd.

Feng-Cheng Yang

Yen-Ming Chen

Wei-Yang Lee

Sheng-Chen Wang

Chung-Te Lin

Meng-Han Lin

Han-Jong Chia

Sai-Hooi Yeong

Feng-Ching Chu

Kai-Hsuan Lee

Chia-Ta Yu

Yen-Ting Chen

Yu-Ming Lin

Bo-Yu Lai

Ting-Yeh Chen

Sheng-Chih Lai

Yu-Wei Jiang

Tzu-Hsiang Hsu

Cheng-Yu Yang

Wei-Yuan Lu

Hung-Chang Sun

Kuo-Chang Chiang

Jian-Hao Chen

Kuo-Feng Yu

Shih-Hao Lin

Hui-Chi Chen

I-Hsieh Wong

Chia-Wei Chen

TsuChing Yang

Shan-Mei Liao

Teng-Chun Tsai

Ziwei Fang

Bo-Feng Young

Hsueh-Chang Sung

Chia-Jung Hsu

Yen-Chieh Huang

Chien-Wei Lee

Chih-Yu Hsu

Chen-Jun Wu

Chi On Chui

Yi-Ching Liu

Li-Li Su

Sai-hooi Yeong

Chieh-Fang Chen

Tsu Ching Yang

Tsung-Lin Lee

Yih-Ann Lin

Yen-Ru Lee

Hui-Hsien Wei

Bo-Cyuan Lu

Pin-Cheng Hsu

Gin-Chen Huang

Tzu-Ching Lin

Chia-Ling Chan

Yen-Chung Ho

Chia-Jung Yu

Yong-Jie Wu

Kuei-Lun Lin

Chun-An Lin

Yi-Hsiu Liu

Jyun-Chih Lin

Chia-Chun Lan

Yu-Chia Liang

Cheng Hong Yang

Chii-Horng Li

Katherine H Chiang

Ying-Ho Chen

Chien-I Kuo

Chia-en Huang

Chun-Fu Cheng

Nuo Xu

Han-Wei Wu

Chih-Hsiang Huang

Neil Quinn Murray

Hsiao-Chiu Hsu

Yu-Chien Chiu

Chung-Chi Wen

Hung Lo

Mei-Yun Wang

Chia-En Huang

Fu-Kai Yang

Dian-Hau Chen

Da-Yuan Lee

Chen-Ming Lee

Chi-On Chui

I-Wen Wu

Cheng-Hao Hou

Ya-Yun Cheng

Chih-Hung Wang

Tsung-Da Lin

Kuo Chang Chiang

LI-Li Su

Chieh-Yi Shen

Chih-Hsin Yang

Pin-cheng Hsu

Yea-Dean Sheu

Wen-Ling Lu

Shih-Hsuan Chien

A memory device includes a multi-layer stack, a channel layer, a memory material layer and at least three conductive pillars. The multi-layer stack is disposed on a substrate and includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The channel layer and memory material layer penetrate through the plurality of conductive layers and the plurality of dielectric layers. The at least three conductive pillars are surrounded by the channel layer and the memory material layer, wherein the at least three conductive pillars are electrically connected to conductive layers respectively. The at least three conductive pillars includes a first, a second and a third conductive pillars disposed between the first conductive pillar and the second conductive pillar. A third width of the third conductive pillar is smaller than a first width of the first conductive pillar and a second width of the second conductive pillar.

Memory device and method of forming the same

A method includes providing a workpiece including a gate structure (MG), a first spacer along a sidewall of the MG, a second spacer along a sidewall of the first spacer, and a source/drain (S/D) feature adjacent to the second spacer. The method further includes forming a contact trench over the S/D feature, removing the second spacer to form an air gap between the MG and the S/D feature, depositing a first dielectric layer over the S/D feature and partially filling the air gap, removing a portion of the first dielectric layer to expose a central portion of a top surface of the S/D feature while a side portion of the top surface of the S/D feature remains under the first dielectric layer, forming an S/D contact in the contact trench, removing the first dielectric layer to extend the air gap, and depositing a second dielectric layer over the air gap.

Methods of reducing parasitic capacitance in semicondutor devices

A transistor includes a gate electrode, a ferroelectric layer, a channel layer, a gas impermeable layer, a dielectric layer, a source line and a bit line. The ferroelectric layer is disposed on the gate electrode. The channel layer is disposed on the ferroelectric layer. The gas impermeable layer is disposed in between the channel layer and the gate electrode, and in contact with the ferroelectric layer. The dielectric layer is surrounding the ferroelectric layer and the channel layer, and in contact with the gas impermeable layer. The source line and the bit line are embedded in the dielectric layer and connected to the channel layer.

Integrated circuit, transistor and method of fabricating the same

A semiconductor device and method of manufacture are provided. In embodiments a memory array is formed by manufacturing portions of a word line during different and separate processes, thereby allowing the portions formed first to act as a structural support during later processes that would otherwise cause undesired damage to the structures.

Three-dimensional memory device and method

A semiconductor device includes a substrate; two source/drain (S/D) regions over the substrate; a gate stack over the substrate and between the two S/D regions; a spacer layer covering sidewalls of the gate stack; an S/D contact metal over one of the two S/D regions; a first dielectric layer covering sidewalls of the S/D contact metal; and an inter-layer dielectric (ILD) layer covering the first dielectric layer, the spacer layer, and the gate stack, thereby defining a gap. A material of a first sidewall of the gap is different from materials of a top surface and a bottom surface of the gap, and a material of a second sidewall of the gap is different from the materials of the top surface and the bottom surface of the gap.

Semiconductor device with air-spacer

In an embodiment, a device includes: a word line extending in a first direction; a data storage layer on a sidewall of the word line; a channel layer on a sidewall of the data storage layer; a back gate isolator on a sidewall of the channel layer; and a bit line having a first main region and a first extension region, the first main region contacting the channel layer, the first extension region separated from the channel layer by the back gate isolator, the bit line extending in a second direction, the second direction perpendicular to the first direction.

Three-dimensional memory devices

A 3D memory array includes a tableland feature formed with multiple 3D memory sub-arrays that are arranged in an X-axis direction. Each 3D memory sub-array includes multiple memory cells that are distributed in multiple columns arranged in the X-axis direction, multiple bit lines extending in a Z-axis direction, multiple source lines extending in the Z-axis direction, and multiple word lines extending in a Y-axis direction. Each memory cell includes a first electrode, a second electrode and a gate electrode. Each bit line interconnects the first electrodes of some of the memory cells aligned in the Z-axis direction. Each bit line is electrically connected to another bit line of the same 3D memory sub-array, which is aligned with the bit line in the X-axis direction, and is electrically isolated from the bit lines of another 3D memory sub-array.

Structure of three-dimensional memory array

Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a first semiconductor stack and a second semiconductor stack over a substrate, wherein each of the first and second semiconductor stacks includes semiconductor layers stacked up and separated from each other; a dummy spacer between the first and second semiconductor stacks, wherein the dummy spacer contacts a first sidewall of each semiconductor layer of the first and second semiconductor stacks; and a gate structure wrapping a second sidewall, a top surface, and a bottom surface of each semiconductor layer of the first and second semiconductor stacks.

Post gate dielectric processing for semiconductor device fabrication

A semiconductor device including a fin field effect transistor (FinFET) with a cut metal gate (CMG) and a method of manufacturing the semiconductor device are described herein. The method includes forming a CMG protective helmet structure at a top portion of a CMG dummy gate plug formed within a semiconductor substrate. The CMG protective helmet structure prevents consumption and damage of a dummy filler material in a CMG region and prevents undesirable polymer/residue byproducts from forming on top surfaces of epitaxial regions of the FinFET during etching processes.

Semiconductor device and method

A semiconductor device including a source/drain region having a V-shaped bottom surface and extending below gate spacers adjacent a gate stack and a method of forming the same are disclosed. In an embodiment, a method includes forming a gate stack over a fin; forming a gate spacer on a sidewall of the gate stack; etching the fin with a first anisotropic etch process to form a first recess adjacent the gate spacer; etching the fin with a second etch process using etchants different from the first etch process to remove an etching residue from the first recess; etching surfaces of the first recess with a third anisotropic etch process using etchants different from the first etch process to form a second recess extending below the gate spacer and having a V-shaped bottom surface; and epitaxially forming a source/drain region in the second recess.

A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Flexible merge scheme for source/drain epitaxy regions

A method for forming a semiconductor memory structure is provided. The method includes forming a stack over a substrate, and the stack includes first dielectric layers and second dielectric layers vertically alternately arranged. The method also includes forming first dielectric pillars through the stack, and etching the stack to form first trenches. Sidewalls of the first dielectric pillars are exposed from the first trenches. The method also includes removing the first dielectric pillars to form through holes, removing the second dielectric layers of the stack to form gaps between the first dielectric layers, and forming first conductive lines in the gaps.

Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines

A method for fabricating a semiconductor device that includes a merged source/drain feature extending between two adjacent fin structures is provided. An air gap is formed under the merged source/drain feature. Forming the epitaxial feature includes growing a first epitaxial feature having a first portion over the first fin structure and a second portion over the second fin structure, growing a second epitaxial feature over the first and second portions of the first epitaxial feature, and growing a third epitaxial feature over the second epitaxial feature. The second epitaxial feature includes a merged portion between the first fin structure and the second fin structure.

Semiconductor device with phosphorus-doped epitaxial features

A memory device, a semiconductor device and a manufacturing method of the memory device are provided. The memory device includes first, second and third stacking structures, first and second channel structures, a gate dielectric layer, a switching layer, and first and second gate structures. The first, second and third stacking structures are laterally spaced apart from one another, and respectively comprise a conductive layer, an isolation layer and a channel layer. The third stacking structure is located between the first and second stacking structures. The first channel structure extends between the channel layers in the first and third stacking structures. The second channel structure extends between the channel layers in the second and third stacking structures. The gate dielectric layer and the first gate structure wrap around the first channel structure. The switching layer and the second gate structure wrap around the second channel structure.

Memory device, semiconductor device and manufacturing method of the memory device

A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a first layer stack and a second layer stack successively over a substrate, where the first layer stack and the second layer stack have a same layered structure that includes a layer of a first electrically conductive material over a layer of a first dielectric material, where the first layer stack extends beyond lateral extents of the second layer stack; forming a trench that extends through the first layer stack and the second layer stack; lining sidewalls and a bottom of the trench with a ferroelectric material; conformally forming a channel material in the trench over the ferroelectric material; filling the trench with a second dielectric material; forming a first opening and a second opening in the second dielectric material; and filling the first opening and the second opening with a second electrically conductive material.

Three-dimensional stackable ferroelectric random access memory devices and methods of forming

Growing community of inventors

Hsinchu County, Taiwan

Feng-Cheng Yang