Formosa Epitaxy Incorporation

Epistar Corporation

Fen-Ren Chien

Liang-Wen Wu

Cheng-Tsang Yu

Tzu-Chi Wen

Ru-Chin Tu

Lung-Chien Chen

Shyi-Ming Pan

Wen-How Lan

Zhi-Ting Ye

Cheng-Kuo Huang

Yun-Li Li

Huan-Che Tseng

Ya-Ping Tsai

Kuo-Chin Huang

Kuang-Neng Yang

Feng-Ku Chien

Yi-Tsung Chang

Chi-Yang Chuang

Ming-Sheng Chen

Fu-Yu Chang

An illumination device includes at least one semiconductor light emitting element, a supporting base, and a lamp housing. The semiconductor light emitting element is disposed on the supporting base. The lamp housing is disposed on the supporting base to cover the semiconductor light emitting element, and includes a first illuminating part and a lateral illuminating part surrounding the first illuminating part. A micro-structure is formed on a side of the first illuminating part and facing the semiconductor light emitting element for reflecting the light emitted from the semiconductor light emitting element.

Illumination device having broad lighting distribution

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) structures. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Illumination device with inclined light emitting element disposed on a transparent substrate

A light source device including a light emitting diode (LED) chip and a molding lens is provided. The molding lens is directly formed on the LED chip and includes a center of a bottom where the LED chip located at and a light exiting surface formed corresponding to the center. The light exiting surface comprises a concave portion, a first light exiting region surrounding the concave portion and a second light exiting region surrounding the first light exiting region. The first light exiting region connects between the concave portion and the second light exiting region.

Light source device

A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

Light-emitting gallium nitride-based III-V group compound semiconductor device and manufacturing method thereof

A LED chip including a substrate, a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, at least an Indium-doped AlGaN based material layer (0&#x2266;x&#x3c;1) and at least a tunneling junction layer is provided. The first type doped semiconductor layer is disposed on the substrate, and the light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The Indium-doped AlGaN based material layer is disposed on at least one surface of the light emitting layer, and the tunneling junction layer is disposed between the Indium-doped AlGaN based material layer and the first type doped semiconductor layer and/or disposed between the Indium-doped AlGaN based material layer and the second type doped semiconductor layer, wherein the Indium-doped AlGaN based material layer and the tunneling junction layer are disposed on the same side of the light emitting layer.

Light emitting diode chip

A number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand are provided. The light-emitting layer structure provided is located between the n-type GaN contact layer and the p-type GaN contact layer. Sequentially stacked on top of the n-type GaN contact layer is the light-emitting layer containing a lower barrier layer, at least one intermediate layer, and an upper barrier layer. That is, the light-emitting layer contains at least one intermediate layer interposed between the upper and lower barrier layers. When there are multiple intermediate layers inside the light-emitting layer, there is an intermediate barrier layer interposed between every two immediately adjacent intermediate layers.

Gallium-nitride based light emitting diode light emitting layer structure

A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

Manufacturing method of multi-directional light scattering LED

A light-emitting diode chip (LED chip) including a substrate, an electrostatic conducting layer, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer, a first electrode and a second electrode is provided. The electrostatic conducting layer is disposed on the substrate, while the first type doped semiconductor layer is disposed on a partial area of the electrostatic conducting layer. Besides, the active layer is disposed on a partial area of the first type doped semiconductor layer, while the second type doped semiconductor layer is disposed on the active layer. In addition, the first electrode is disposed on the first type doped semiconductor layer, while the second electrode is disposed on the second type doped semiconductor layer. The LED chip of the present invention has an electrostatic conducting layer, which protects the LED from electrostatic discharge damage (ESD damage).

Light-emitting diode chip

Multi-directional light scattering LED and manufacturing method thereof

A light-emitting diode structure with transparent window covering layer of multiple films includes one (or several) first transparent covering layer(s) and one (or several) second covering layer(s), which are formed on the outside of the light-emitting diode chip. The light-emitting diode chip can emit light in more than two wavelengths to increase the transmission of the different wavelengths and the taking out efficiency of the light-emitting diode. The first transparent covering layer(s) and the second covering layer(s) are deposited each on the other on the outside of the light-emitting diode chip. The surface of the light-emitting diode with the covering layers is smooth. The contacting parts of the first transparent covering layer(s) and the second covering layer(s) are connected by a strong adhesive force and the contacting parts of the covering layer and light-emitting diode chip also are connected by a strong adhesive force.

Light-emitting diode structure with transparent window covering layer of multiple films

A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure either made of layers of SiN and undoped indium-gallium-nitride (InGaN), or made of layers SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided.

High-brightness gallium-nitride based light emitting diode structure

A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. A first metallic layer and a second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer are bonded onto the N electrode layer and the P electrode layer respectively through supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.

Light emitting semiconductor bonding structure and method of manufacturing the same

A GaN-based LED structure is provided so that the brightness and luminous efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a masking buffer layer and a roughened contact layer on top of the masking buffer layer. The masking buffer layer contains randomly distributed clusters made of a group-IV nitride SiN(x,y&#x2267;1), a group-II nitride MgN(w,z&#x2267;1), or a group-III nitride AlInGaN (0&#x2266;s,t&#x3c;1, s+t&#x2266;1) heavily doped with at least a group-II and group-IV element such as Mg and Si. The roughened contact layer, made of AlInGaN (0&#x2266;u,v&#x3c;1, u+v&#x2266;1), starts from the top surface of an underlying second contact layer not covered by the masking buffer layer's clusters, and then grows upward until it passes (but does not cover) the clusters of the masking buffer layer for an appropriate distance. The total internal reflection that could have been resulted from the GaN-based LEDs' higher index of refraction than that of the atmosphere could be avoided.

A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to top in this order. The layers are all made of aluminum-gallium-indium-nitride (AlGaInN) compound semiconductors. By varying the composition of aluminum, gallium, and indium, the layers, on one hand, can achieve the desired band gaps so that the photo detector is highly responsive to ultraviolet lights having specific wavelengths. On the other hand, the layers have compatible lattice constants so that problems associated with excessive stress are avoided and high-quality epitaxial structure is obtained. The structure further contains a positive electrode, a light penetration contact layer, and an anti-reflective coating layer on top of the p-type contact layer, and a negative electrode on the n-type contact layer.

Gallium-nitride based ultraviolet photo detector

An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of the p-type contact layer within traditional GaN-based LEDs, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg&#x3c;3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). This anti-ESD thin layer greatly improves the GaN-based LEDs' reverse withstanding voltage and resistivity to ESD, which in turn extends the GaN-based LEDs' operation life significantly.

Growing community of inventors

Yonghe, Taiwan

Fen-Ren Chien