Lam Research Corporation

Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Fen Dai

Cangshan Xu

Eugene Yuexing Zhao

Shawming Ma

Tinghao Frank Wang

Oliver D Jan

Zhongming Liu

Moo-Hyun Kim

Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.

Carbon containing hardmask removal process using sulfur containing process gas

As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer where the reinforcement layer is a fibrous-type material. In addition, the polishing pad is located over the base belt.

Methods for making reinforced wafer polishing pads and apparatuses implementing the same

A seamless polishing apparatus for utilization in chemical mechanical polishing is disclosed. The seamless polishing apparatus includes a base belt that has a reinforcement layer and a cushioning layer. The seamless polishing apparatus also includes a polishing pad that is attached to the base belt as a result of a direct casting of a polymeric precursor on a top surface of the cushioning layer. In addition, the cushioning layer is an intermediary layer between the polishing belt pad and the base belt.

Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same

As one of many embodiments of the present invention, a seamless polishing apparatus for utilization in chemical mechanical polishing is provided. The seamless polishing apparatus includes a polishing pad where the polishing pad is shaped like a belt and has no seams. The seamless polishing apparatus also includes a base belt where the base belt includes a reinforcement layer and a cushioning layer. In addition, the cushioning layer is an intermediary layer between the polishing belt pad and the base belt.

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Fremont, CA, United States of America

Fen Dai