Siemens Aktiengesellschaft

Felix Zeyss

Bernd Kürten

Stefan Stegmeier

Markus Pfeifer

Lutz Namyslo

Roland Lorz

Erik Weisbrod

Ronny Werner

Silvio Höhne

Markus Lasch

Robert Gospos

Michael Endres

Pietro Botazzoli

An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.

Arrangement for a semiconductor arrangement comprising at least one passive component and a substrate

A semiconductor arrangement includes a substrate, a semiconductor element connected to the substrate and including on a side remote from the substrate a contact surface which is connected to the substrate via a first bond connecting means such that as to form on the contact surface a stitch contact arranged between a first loop and a second loop of the first bond connecting means. The first loop has a first maximum and the second loop has a second maximum. A second bond connecting means has a first transverse arranged to run above the first stitch contact and, viewed running parallel to the contact surface, between the first maximum of the first loop and the second maximum of the second loop. The first transverse loop of the second bond connecting means is arranged to run below the first maximum of the first loop and/or the second maximum of the second loop.

Semiconductor arrangement comprising a semiconductor element, a substrate and bond connecting means

A power module includes at least two power semiconductor arrangements, each having at least one semiconductor component, in contact with substrate and arranged in a housing. To improve the reliability of the power module, a first power connector and a second power connector are arranged on a first side of the housing and at least one other power connector is arranged on an opposing second side of the housing. Supply lines extending from the power connectors to the power semiconductor arrangements are arranged on the substrate in such a manner that electrical current is provided in a symmetrical manner.

Power module having at least two power semiconductor arrangements that are contacted on a substrate

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Erlangen, Germany

Felix Zeyss