Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Felix Kimme

Peter Brick

Christopher Koelper

The invention relates to a method for classifying a light-emitting semiconductor component () for an image sensor application, wherein the semiconductor component () is designed as a light source for an image sensor (), comprising the following steps: providing the light-emitting semiconductor component (); determining at least one of the following parameters of the light emitted with an emission spectrum by the light-emitting semiconductor component () during operation: R=&#x222b;qR(&#x3bb;)&#xb7;S(&#x3bb;)d&#x3bb;&#xb7;texp, G=&#x222b;qG(&#x3bb;)&#xb7;S(&#x3bb;)d&#x3bb;&#xb7;texp, B=&#x222b;qB(&#x3bb;)&#xb7;S(&#x3bb;)d&#x3bb;&#xb7;texp, wherein qR(&#x3bb;), qG(&#x3bb;), and qB(&#x3bb;) are spectral sensitivities of a red, green, and blue color channel of the image sensor (), S(&#x3bb;) is the emission spectrum of the light-emitting semiconductor component (), texp is an exposure time, and &#x3bb; designates a wavelength; classifying the light-emitting semiconductor component () into a class from a group of classes, which are characterized by different value ranges of at least one parameter that depends on at least one of the parameters R, G, and B. The invention further relates to an image sensor application.

Method for classifying light-emitting semiconductor components and image sensor application having an image sensor and a semiconductor element

In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.

Backlighting device

In a method, a spectral performance of the electromagnetic radiation is chosen in such a way that an integral of the spectral performance across a wave length interval between 380 nm and 780 nm has a nominal value, an integral of the spectral performance across a wave length interval between 420 nm and 460 nm has a first value, an integral of the spectral performance across a wave length interval between 510 nm and 550 nm has a second value, and an integral of the spectral performance across a wave length interval between 580 nm and 620 nm has a third value. The ratios of these values are chosen to be within certain ranges.

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Stephanskirchen, Germany

Felix Kimme