Massachusetts Institute of Technology

Felix Jan Grawert

Shoji Akiyama

Kazumi Wada

Franz Xaver Kaertner

An optical semiconductor includes a first semiconductor layer and at least one reflective element that is formed on the semiconductor layer. The at least one reflective element comprises alternating layers of high and low index layers. A crystalline semiconductor layer is formed on the at least one reflective element.

Optical device comprising crystalline semiconductor layer and reflective element

An optical reflector includes an optical reflective element that comprises alternating layers of high and low index layers. A new substrate is bonded on the optical reflective element. The sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, are buried deep in the multilayer stack.

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Cambridge, MA, United States of America

Felix Jan Grawert