Osram Opto Semiconductors Gmbh

Felix Feix

Petrus Sundgren

Stefan Illek

Andreas Biebersdorf

Christoph Klemp

Ines Pietzonka

Ana Kanevce

Christian Berger

Laura Kreiner

Thomas Schwarz

Peter Brick

Siegfried Herrmann

Erwin Lang

Karsten Diekmann

Marc Philippens

Michael Brandl

Jean-Jacques Drolet

Andreas Leber

Julia Stolz

Xue Wang

Nicole Heitzer

Marie Assmann

Eva-Maria Rummel

Andreas Rausch

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

Optoelectronic component, semiconductor structure and method

In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(AlGa)In]Pwith x≥0.5, and wherein the quantum well layers are grown in A) from [(AlGa)In]Pwith o<a≤

Method for producing optoelectronic semiconductor chips, and optoelectronic semiconductor chip

The invention relates to various aspects of a &#x3bc;-LED or a &#x3bc;-LED array for augmented reality or lighting applications, in particular in the automotive field. The &#x3bc;-LED is characterized by particularly small dimensions in the range of a few &#x3bc;m.

&#x3bc;-LED, &#x3bc;-LED device, display and method for the same

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Jena, Germany

Felix Feix