Applied Materials, Inc.

Felix Deng

Nuno Yen-Chu Chen

Yueh Sheng Ow

Yuichi Wada

Tuck Foong Koh

Sree Rangasai V Kesapragada

Clinton Goh

Arvind Sundarrajan

Guan Huei See

Ananthkrishna Jupudi

Jun-Liang Su

Fang Jie Lim

Chin Wei Tan

Yue Cui

Sai Kumar Kodumuri

Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.

Methods for forming microwave tunable composited thin-film dielectric layer

Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

Low warpage curing methodology by inducing curvature

Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

Methods and apparatus for cleaving of semiconductor substrates

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Singapore, Singapore

Felix Deng