Infineon Technologies Ag

Infineon Technologies Dresden Gmbh

Felix Braun

Dirk Meinhold

Klemens Pruegl

Hermann Gruber

Dirk Offenberg

Uwe Hoeckele

Ines Uhlig

Emanuele Bruno Bodini

Anton Mauder

Helmut Strack

Marko Lemke

Dieter Kaiser

Kurt Sorschag

Marcel Heller

Daniel Sarlette

Ingo Meusel

Jens Schneider

Ralf Rudolf

Andreas Greiner

Heiko Aßmann

Karsten Friedrich

Udo Goetschkes

Marcus Dankelmann

Stefan Doering

Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

Method of manufacturing an imager and imager device

In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.

Method for producing a self-aligning masking layer

Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

A method for forming a semiconductor device includes providing a semiconductor substrate having an upper side and comprising, in a vertical cross-section substantially orthogonal to the upper side, a plurality of semiconductor mesas of a first monocrystalline semiconductor material which are spaced apart from each other by sacrificial layers selectively etchable with respect to the first monocrystalline semiconductor material and arranged in trenches extending from the upper side into the semiconductor substrate, forming on the semiconductor mesas a support structure mechanically connecting the semiconductor mesas, at least partly replacing the sacrificial layers while the semiconductor mesas remain mechanically connected via the support structure, and at least partly removing the support structure.

Methods for manufacturing semiconductor devices

A method for producing a semiconductor device is provided. The method includes: forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas; forming a support structure mechanically connecting the semiconductor mesas spaced apart from each other by one of the substantially empty trench and the trench substantially filled with the sacrificial layer; and processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure.

Method for manufacturing a semiconductor device

Growing community of inventors

Dresden, Germany

Felix Braun