Gpower Semiconductor, Inc.

Feihang Liu

Yi Pei

Yuan Li

Naiqian Zhang

A field plate power device comprises: a substrate; a multilayer semiconductor layer disposed on the substrate; a source electrode, a drain electrode, and a gate electrode located between the source electrode and the drain electrode disposed on the multilayer semiconductor layer; a dielectric layer disposed on the gate electrode, a part of the multilayer semiconductor layer between the gate electrode and the source electrode and another part of the multilayer semiconductor layer between the gate electrode and the drain electrode; a groove disposed in a part of the dielectric layer between the gate electrode and the drain electrode; and a field plate disposed on the groove. The field plate comprises a first portion away from the gate electrode in a horizontal direction, and the first portion has an overall upward tilted shape in the horizontal direction away from the gate electrode.

Field plate power device and method of manufacturing the same

A semiconductor device comprises an active region and a passive region located outside the active region. The active region comprises a plurality of active region units. At least one pair of adjacent active region units do not completely overlap in a length direction of the semiconductor device.

Semiconductor device and method of manufacturing the same

A field plate power device comprises: a substrate; a multilayer semiconductor layer disposed on the substrate; a source electrode, a drain electrode, and a gate electrode located between the source electrode and the drain electrode disposed on the multilayer semiconductor layer; a dielectric layer disposed on the gate electrode, a part of the multilayer semiconductor layer between the gate electrode and the source electrode and another part of the multilayer semiconductor layer between the gate electrode and the drain electrode; a groove disposed in a part of the dielectric layer between the gate electrode and the drain electrode; and a field plate disposed on the groove. The field plate comprises a first portion away from the gate electrode in a horizontal direction, the first portion has an overall upward tilted shape in the horizontal direction away from the gate electrode.

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Suzhou, China

Feihang Liu