Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Kyungpook National University Industry-Academic Cooperation Foundation

Feifei Fang

Kyung Bae Park

Sung Young Yun

Chul Joon Heo

Sung Jun Park

Myung Sup Jung

Jong Hoon Won

Yong Joo Lee

Deuk Kyu Moon

Sang Ho Park

Seon-Jeong Lim

Taejin Choi

Myung Man Kim

Beom Seok Kim

Youn Hee Lim

Young Hwan Kim

Hyeon Ho Choi

Hwijoung Seo

Yong Wan Jin

In Gun Kim

Kyeong Pang

Hyoungwoo Choi

In Su Lee

In Ki Kim

Sungyoung Yun

Hyeongju Kim

Tae Jin Choi

Sung H Hong

Jeong Il Park

Dmitry Androsov

Myung-Sup Jung

Dong Yun Lee

Hiromasa Shibuya

Fedosya Kalinina

Byung Ha Park

Boreum Jeong

Jeoungin Yi

Joungeun Yoo

Cheol Ham

Won Suk Chang

Jisoo Shin

Hye Rim Hong

Ginam Kim

Chui Joon Heo

Hyeong-Ju Kim

Younhee Lim

Hyerim Hong

Sung Dug Kim

Seong-Jun Yoon

Jae Hong Choi

Juhyung Lim

Hyeong-ju Kim

A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Composition for photoelectric device, and photoelectric device, image sensor and electronic device including the same

Disclosed are a compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel, and an electronic device. In Chemical Formula 1, X, A, and Rto Rare as described in the specification.

Compound, sensor, sensor embedded display panel, and electronic device

A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.

Sensor embedded display panel and electronic device

An organic photodiode includes a first electrode including a reflective layer, a second electrode including a semi-transmissive layer, a photoelectric conversion layer between the first electrode and the second electrode and including an organic light absorbing material, and a buffer layer that is at least one of between the reflective layer and the photoelectric conversion layer or between the semi-transmissive layer and the photoelectric conversion layer. The organic photodiode is configured to exhibit at least three external quantum efficiency (EQE) spectra in a wavelength region of about 380 nm to about 3000 nm and each EQE spectrum of the at least three EQE spectra has a full width at half maximum of about 2 nm to about 100 nm.

Organic photodiode, sensor, camera, and electronic device

A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound. In Chemical Formula 1, X, X, X, Ar, L, A, R, and Rare the same as in the specification.

Compound and sensor and sensor embedded display panel and electronic device

A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

Sensor-embedded display panel and electronic device

An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

Image sensors and electronic devices

An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.

A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

Sensors and electronic devices

Disclosed are a photoelectric conversion device and an organic sensor and an electronic device including the same. The photoelectric conversion device includes a first and a second electrode, a photoelectric conversion layer between the first and the second electrode and configured to absorb light in at least one portion of a wavelength spectrum and to convert the absorbed light into an electric signal, and a buffer layer between the second electrode and the photoelectric conversion layer and including a mixture of at least two materials. The mixture includes a first and a second material. The first material has an energy bandgap of at least about 3.2 eV and a HOMO energy level of at least about 6.0 eV. The second material has an energy bandgap of less than or equal to about 2.8 eV and a HOMO energy level of at least about 6.0 eV.

Photoelectric conversion device, organic sensor and electronic device

A liquid crystal polymer including structural units derived from an aromatic hydroxy carboxylic acid in an amount of greater than about 30 mol % and less than or equal to about 50 mol %, an aromatic dicarboxylic acid which includes about 50 mol % or greater of a structural unit derived from a compound including two carboxyl groups at a meta-position of an aromatic ring in an amount greater than or equal to about 50 mol % of the amount of the structural unit derived from the aromatic hydroxy carboxylic acid, each based on total moles of the structural units in the liquid crystal polymer, and an aromatic diol that is 4,4'-dihydroxybiphenyl, hydroquinone, or a combination thereof; a composite composition including the liquid crystal polymer, an article produced from the liquid crystal polymer or the composite composition, a battery case including the article, and a battery including the battery case and an electrode assembly.

Liquid crystal polymer, composite composition, article, battery case, and battery

Disclosed are a surface coating material including a compound represented by Chemical Formula 1, a film, a stacked structure, a display device, and an article including a glass substrate coated with the surface coating material.  In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Surface coating material and film and stacked structure and display device and article

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Suwon-si, South Korea

Feifei Fang