Omnivision Technologies, Inc.

Fei Wu

Hidetoshi Nozaki

Jizhang Shan

Howard E Rhodes

Yin Qian

Hsin-Chih Tai

Hongjun Li

Shunbo Mou

An example image sensor includes first, second, and third micro-lenses. The first micro-lens is in a first color pixel and has a first curvature and a first height. The second micro-lens is in a second color pixel and has a second curvature and a second height. The third micro-lens is in a third color pixel and has a third curvature and a third height. The first curvature is the same as both the second curvature and the third curvature and the first height is greater than the second height and the second height is greater than the third height, such that light absorption depths for the first, second, and third color pixels are the same.

Image sensor with color pixels having uniform light absorption depths

An image sensor having an array of pixels disposed in a substrate. The array of pixels includes photosensitive elements, a color filters, and waveguide walls. The waveguide walls are disposed in the color filters and surround portions of the color filters to form waveguides through the color filters. In some embodiments, metal walls may be coupled to the waveguide walls.

Image sensor having waveguides formed in color filters

An imaging system includes an image sensor and an optical filter. The image sensor captures image data in response to incident light. The optical filter filters the light and includes a dual window transmission spectrum. The dual window transmission spectrum includes a first transmission window having a first pass band aligned to pass visible light and a second transmission window having a second pass band overlapping with an absorption band of infrared light in Earth's atmosphere.

Visible and infrared dual mode imaging system

An image sensor in accordance with embodiments disclosed herein includes an array of imaging pixels, an insulator layer, and a plurality of metal reflectors. The array of imaging pixels are disposed within a semiconductor layer, where each imaging pixel in the array of imaging pixels includes a photosensitive element configured to receive light from a backside of the image sensor. The insulator layer is disposed on a frontside of the semiconductor layer and the plurality of metal reflectors are disposed within the insulator layer to reflect the light to a respective photosensitive element. A width of each of the plurality of metal reflectors is equal to a width of a metal reflector at the center of the array multiplied by a scaling factor, where the scaling factor is dependent on a distance of the metal reflector from the center of the array.

Image sensor having array of pixels and metal reflectors with widths scaled based on distance from center of the array

An image sensor having an array of pixels disposed in a substrate. Each pixel includes a photosensitive element, a color filter, and waveguide walls. The waveguide walls are disposed in the color filter and surround portions of the color filter to form waveguides through the color filter. The refractive index of the waveguide walls is less than the refractive index of the color filter. The image sensor may be back side illuminated (BSI) or front side illuminated (FSI). In some embodiments, metal walls may be coupled to the waveguide walls.

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San Jose, CA, United States of America

Fei Wu