Powerchina Huadong Engineering Corporation Limited

Ningbo Crrc Times Transducer Technology Co., Ltd.

Fei Wang

Liangguang Zheng

Xiaowei Hou

Junjie Guo

Juping Li

Chunlin Huang

Dongliang Zhang

Xingjian Sun

Huafeng Yu

Tianhao Li

Jinjun Chen

Qunyi Tang

Dacheng Ni

Junzhong Xue

Ziteng Peng

Huaxiong Zheng

Zhongshuai Yuan

Weijiang Feng

Kun Fu

The present invention discloses a prestressed-bolted dry-assembled segmental precast hybrid tower with grouting-free, comprising a top steel tower tube, a reverse self-balancing steal-concrete transition section, and a prestressed-bolted dry-assembled segmental precast concrete tower with grouting-free dry fast splicing and a gear reinforced wind turbine foundation; the steel tower tube, the steel-concrete transition section, the concrete tower tube and the hollow wind turbine foundation are integrally connected from top to bottom through a prestressed steel strand system to improve the overall bending resistance of the tower; the upper end of the prestressed steel strands is anchored to the steel-concrete transition section, and the lower end is anchored to the bottom face of the wind turbine foundation corbel; the concrete tower tube is composed of a number of segmental tapered precast concrete tower segments, which are grouting free spliced vertically, and the vertical splicing utilizes positioning pins to accurately position the installation position. The prefabricated concrete tower tube segment is formed by a number of circular arc-shaped prefabricated concrete pipe segments with circumferential grouting free dry splicing. The segments are spliced into a whole by prestressed bolts and then installed staggered from top to bottom to enhance the shear resistance.

Prestressed-bolted dry-assembled segmental precast hybrid tower with grouting-free

A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.

Semiconductor silicon-germanium thin film preparation method

Growing community of inventors

Zhejiang, China

Fei Wang