Apple Inc.

University of Illinois

Fei Tan

Tong Chen

Weiping Li

Arnaud Laflaquière

Keith Lyon

Marc A Drader

Nick Holonyak, Jr

Milton Feng

Arnaud Laflaquiere

Chin Han Lin

Jae Y Park

Mingzhou Jin

Christophe Vérove

Han Wui Then

Mong-Kai Wu

Xiaolong Fang

Chinhan Lin

Mark Stuenkel

Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Self-mixing interference device for sensing applications

An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

VCSEL with integrated electrodes

An optical sensor system includes a set of epitaxial layers formed on a semiconductor substrate. The set of epitaxial layers defines a semiconductor laser having a first multiple quantum well (MQW) structure. Electromagnetic radiation is generated by the first MQW structure, emitted from the first MQW structure, and self-mixed with a portion of the emitted electromagnetic radiation that is returned to the first MQW structure. The set of epitaxial layers also defines a second MQW structure operable to generate a first photocurrent responsive to detecting a first emission of the semiconductor laser, and a third MQW structure operable to generate a second photocurrent responsive to detecting a second emission of the semiconductor laser. The optical sensor system also includes a circuit configured to generate a self-mixing interferometry (SMI) signal by combining the first photocurrent and the second photocurrent.

Laser-integrated balance detection for self-mixing interferometry

An optical sensor system including a semiconductor substrate; a self-mixing interferometry (SMI) sensor formed on the semiconductor substrate and including a semiconductor laser having a resonant cavity; and an array of photodetectors formed on the semiconductor substrate. The SMI sensor is configured to generate an SMI signal responsive to a retro-reflection of electromagnetic radiation emitted by the semiconductor laser and received into the resonant cavity. The array of photodetectors is configured to generate a set of angular-resolved scatter signals responsive to a scatter of the electromagnetic radiation emitted by the semiconductor laser.

Hybrid interferometric and scatterometric sensing using in-plane sensors

An optoelectronic device includes a semiconductor substrate and an optically-active structure, including epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack, a quantum well structure with P- and N-doped layers disposed respectively on opposing sides of the quantum well structure, and an upper DBR stack. Electrodes are coupled to apply a bias voltage between the P- and N-doped layers. Control circuitry, disposed on the substrate, is configured to apply a forward bias voltage between the electrodes so as to cause the optically-active structure to emit an optical pulse through the upper DBR stack, and then to reverse the bias voltage between the electrodes so as to cause the optically-active structure to output an electrical pulse to the control circuitry in response to incidence of one or more of the photons, due to reflection of the optical pulse, on the quantum well structure through the upper DBR stack.

Integrated device for optical time-of-flight measurement

An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.

Indium-phosphide VCSEL with dielectric DBR

An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

Monolithic infrared transceiver

A method for electrical and optical bistable switching, including the following steps: providing a semiconductor device that includes a semiconductor base region of a first conductivity type between semiconductor collector and emitter regions of a second conductivity type, providing a quantum size region in the base region, and providing base, collector and emitter terminals respectively coupled with the base, collector, and emitter regions; providing input electrical signals with respect to the base, collector, and emitter terminals to obtain an electrical output signal and light emission from the base region; providing an optical resonant cavity that encloses at least a portion of the base region and the light emission therefrom, an optical output signal being obtained from a portion of the light in the optical resonant cavity; and modifying the input electrical signals to switch back and forth between a first state wherein the photon density in the cavity is below a predetermined threshold and the optical output is incoherent, and a second state wherein the photon density in the cavity is above the predetermined threshold and the optical output is coherent, said switching from the first to the second state being implemented by modifying the input electrical signals to reduce optical absorption by collector intra-cavity photon-assisted tunneling, and the switching from the second to the first state being implemented by modifying the input electrical signals to increase photon absorption by collector intra-cavity photon-assisted tunneling.

Transistor laser electrical and optical bistable switching

An opto-electronic oscillator circuit, including: an opto-electronic circuit loop including an optical modulator that receives a first electrical signal and produces an optical output signal coupled with an optical resonator, a photodetector circuit optically coupled with the optical resonator, and a phase shifter coupled with the photodetector circuit for producing a phase shifted output signal that is fed back as the first electrical signal; an optical loop comprising the optical coupling of the optical resonator with the photodetector; and an electrical feedback circuit loop for coupling the first electrical signal with the photodetector circuit.

Growing community of inventors

Santa Clara, CA, United States of America

Fei Tan