Ningbo Semiconductor International Corporation

Ningbo Semiconductor International Corporation (Shanghai Branch)

Fei Qi

Hailong Luo

Wei Li

Guohuang Yang

Huan Sui

Herb He Huang

The present disclosure provides a packaging module and packaging method of a BAW resonator. The packaging method includes: bonding a BAW resonant device including a first substrate and a resonant structure provided on the first substrate to a second substrate through a bonding layer; forming through holes exposing corresponding electrical connection portions of the resonant structure at a side of the first substrate; and forming a conductive interconnection layer on inner surfaces of the through holes and on a portion of a surface of the first substrate to avoid steps of etching through holes and depositing conductive materials from the bonding layer, so that a material of the bonding layer can be selected to provide good bonding effect, which helps to reduce the process difficulty, and improves the stability of the through holes and the formed packaging module, thereby improving the performance of the BAW resonator packaging structure.

Packaging module and packaging method of BAW resonator

The present invention discloses a composite substrate for manufacturing an acoustic wave resonator and a Surface Acoustic Wave (SAW) resonator, and a manufacturing method thereof. The manufacturing method of the composite substrate includes: providing a base, wherein the base includes a first surface and a second surface that are opposite to each other; and a first groove sunken towards the second surface is formed on the first surface; and providing a piezoelectric plate, wherein the piezoelectric plate is matched with the first groove in shape, and a bottom of the first groove is integrated with the piezoelectric plate by bonding; and the composite substrate includes: a base, wherein the base includes a first surface and a second surface that are opposite to each other; and a first groove sunken towards the second surface is provided on the first surface; and a piezoelectric plate, wherein the piezoelectric plate is embedded into the first groove, and a top of the piezoelectric plate is higher than the first surface or flush with the first surface.

Manufacturing method of a composite substrate of an acoustic wave resonator

The present disclosure provides a film bulk acoustic resonator and its fabrication method, a filter, and a radio frequency communication system. The film bulk acoustic resonator includes a first substrate and a support layer disposed on the first substrate, where a cavity is formed in the support layer; a piezoelectric stacked layer covering the cavity, where the piezoelectric stacked layer includes an active resonance region and an inactive resonance region surrounding the active resonance region; and at least two trenches, arranged at a junction of the active resonance region and the inactive resonance region to define a range of the active resonance region. The at least two trenches include a first trench and a second trench; the second trench passes through the second electrode layer and the piezoelectric layer; and the first trench passes the first electrode and the piezoelectric layer and is connected to the cavity.

Film bulk acoustic resonator and fabrication method thereof, filter, and radio frequency communication system

A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The thin film piezoelectric acoustic wave resonator includes: a first base, an upper electrode, a piezoelectric plate body, a lower electrode and an isolation cavity. The upper electrode, the piezoelectric plate body and the lower electrode are arranged on an upper surface of the first base and are stacked sequentially from top to bottom. The upper electrode, the piezoelectric plate body and the lower electrode have an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body, in which a first gap is formed between the piezoelectric plate body and the upper electrode, and a second gap is formed between the piezoelectric plate body and the lower electrode. The isolation cavity surrounds the periphery of the piezoelectric plate body and connects the first and second gaps together. At least one connecting bridge is arranged between the piezoelectric plate body and the base.

Thin film piezoelectric acoustic wave resonator and manufacturing method therefor, and filter

The present disclosure provides a film bulk acoustic resonator and its fabrication method. The film bulk acoustic resonator includes a first substrate, a support layer bonded on the first substrate, a first cavity formed in the support layer, a piezoelectric stacked layer on the support layer, a first trench and a second trench which are formed in the piezoelectric stacked layer, a dielectric layer over the piezoelectric stacked layer, a second cavity formed in the dielectric layer, and a second substrate covering the second cavity, where the first trench is connected to the first cavity, and the second trench is connected to the second cavity.

Film bulk acoustic resonator and fabrication method thereof

A packaging method and a packaging structure of a film bulk acoustic resonator are provided. The packaging method includes: providing a resonant cavity main structure including a first substrate and a film bulk acoustic resonant structure having a first cavity formed therebetween; forming a resonator cover by providing a second substrate and forming an elastic bonding material layer containing a second cavity; bonding the resonant cavity main structure and the resonator cover together through the elastic bonding material layer and removing elasticity of the elastic bonding material layer, where the second cavity is at least partially aligned with the first cavity; forming a through-hole penetrating through the resonator cover and exposing a corresponding electrical connection part of the film bulk acoustic resonant structure; and forming a conductive interconnection layer on a sidewall of the through-hole and on a portion of a surface of the resonator cover.

Packaging method and packaging structure of film bulk acoustic resonator

The present disclosure provides a film bulk acoustic resonator and its fabrication method. The film bulk acoustic resonator includes a first substrate, a first support layer containing a first cavity, a piezoelectric stacked layer, and a first separation structure and/or a second separation structure. The piezoelectric stacked layer includes an effective working region and a parasitic working region; and in the parasitic working region, a first electrode and a second electrode have a corresponding region along a thickness direction. The first separation structure separates the first electrode, and the first electrode of a portion of the parasitic working region is insulated from the first electrode of the effective working region; and the second separation structure separates the second electrode, and the second electrode of a portion of the parasitic working region is insulated from the second electrode of the effective working region.

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Ningbo, China

Fei Qi