Playnitride Display Co., Ltd.

Fei-Hong Chen

Pai-Yang Tsai

Tzu-Yang Lin

Yen-Chun Tseng

Yun-Syuan Chou

Chee-Yun Low

You-Lin Peng

Wan-Jung Peng

Jian-Zhi Chen

Yi-Chun Shih

Jyun-De Wu

Hung-Hsuan Wang

A micro element structure including a body, two electrodes, two solder patterns and a confinement structure is provided. The two electrodes are disposed on a side of the body. The two solder patterns are disposed on the two electrodes, respectively. The confinement structure protrudes relative to the body, wherein the confinement structure surrounds one of the electrodes and the solder pattern thereon, and at least a portion of the confinement structure is separated from the surrounded solder pattern with a gap. A display device is also provided.

Micro element structure and display device

A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

Micro light emitting diode structure

A micro light emitting diode structure including an epitaxial structure, an electrode layer, a barrier layer and a bonding layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. The bonding layer is disposed on the barrier layer and away from the electrode layer.

Micro light emitting diode structure and micro light emitting diode display device

A micro light emitting diode structure including an epitaxial structure, an electrode layer and a barrier layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An orthogonal projection area of the barrier layer on the epitaxial structure is greater than and covers an orthogonal projection area of the electrode layer on the epitaxial structure.

A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.

Micro light-emitting diode and display panel

A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

Micro light emitting diode and display panel having etch protection conductive layer

A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes an epitaxial layer. The micro light-emitting diode structure also includes a reflecting layer disposed on the epitaxial layer. The micro light-emitting diode structure further includes a patterned electrode layer disposed between the epitaxial layer and the reflecting layer. The patterned electrode layer is divided into a plurality of patterned electrode segments, and the patterned electrode segments are separated from each other. Moreover, the micro light-emitting diode structure includes a first-type electrode and a second-type electrode disposed on the reflecting layer and electrically connected to the epitaxial layer.

Micro light-emitting diode structure and micro light-emitting diode display panel using the same

A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Growing community of inventors

MiaoLi County, Taiwan

Fei-Hong Chen