Stmicroelectronics S.r.l.

Federica Ronchi

Andrea Paleari

Domenico Giusti

Fabrizio Fausto Renzo Toia

Antonella Milani

Lucrezia Guarino

Sonia Pirotta

Daniele Merlini

Lorenzo Gola

In one embodiment, a method manufactures a semiconductor device including metallizations having peripheral portions with one or more underlying layers having marginal regions extending facing the peripheral portions. The method includes: providing a sacrificial layer to cover the marginal regions of the underlying layer, providing the metallizations while the marginal regions of the underlying layer are covered by the sacrificial layer, and removing the sacrificial layer so that the marginal regions of the underlying layer extend facing the peripheral portions in the absence of contact interface therebetween, thereby avoiding thermo-mechanical stresses.

Method of manufacturing semiconductor devices and corresponding device

An electric contact structure includes a first structural layer; a second structural layer made of dielectric material extending over the first structural layer; and an intermediate layer made of conductive material extending between the first structural layer and the second structural layer. A trench extends in the second structural layer delimited laterally by a wall of the second structural layer and at the bottom by a surface region of the intermediate layer. A diffusion barrier extends in the trench covering the surface region of the intermediate layer and the wall of the second structural layer. The diffusion barrier is a TiW&#x2014;TiN&#x2014;TiW tri-layer.

Electric contact structure having a diffusion barrier for an electronic device and method for manufacturing the electric contact structure

A method is for the formation of at least one filled isolation trench having a protective cap in a semiconductor layer, and a semiconductor device with at least one filled isolation trench having a protective cap. The method allows obtaining, in an easy way, filled isolation trenches exhibiting excellent functional and morphological properties. The method therefore allows the obtainment of effective filled isolation trenches which help provide elevated, reliable and stable isolation properties.

Isolation trenches

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Bellusco, Italy

Federica Ronchi